SYSTEMS AND METHODS FOR A TOP SIDE COOLED POWER SEMICONDUCTOR THERMAL INTERFACE SPACER

    公开(公告)号:EP4432799A1

    公开(公告)日:2024-09-18

    申请号:EP24160563.3

    申请日:2024-02-29

    IPC分类号: H05K7/20

    CPC分类号: H05K7/209 H05K7/20454

    摘要: A power semiconductor package includes: a first power semiconductor; a cold plate including a floor and a first pedestal extending from the floor, wherein the first pedestal is configured to support the first power semiconductor; a thermal interface material configured to transfer heat from the first power semiconductor to the first pedestal of the cold plate; and a spacer including: a first frame configured to receive at least a portion of the first pedestal, and a second frame configured to receive the thermal interface material; wherein the spacer is configured to provide a uniform thickness of the thermal interface material between the first pedestal of the cold plate and the first power semiconductor.