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    (METH)ACRYLAMIDE POLYMERS FOR CONTACT LENS AND INTRAOCULAR LENS
    1.
    发明公开
    (METH)ACRYLAMIDE POLYMERS FOR CONTACT LENS AND INTRAOCULAR LENS 审中-公开
    （METH）丙烯酰胺聚合物FÜRKONTAKT- INTRAOKULARLINSE

    公开(公告)号：EP3132292A1

    公开(公告)日：2017-02-22

    申请号：EP15719391.3

    申请日：2015-04-17

    申请人： Benz Research And Development Corporation

    发明人： BENZ, Patrick H. ,  REBOUL, Adam

    IPC分类号： G02B1/04 ,  A61L27/16

    CPC分类号： G02B1/043 ,  A61L27/16 ,  A61L27/52 ,  A61L2430/16 ,  C08F20/54 ,  C08F20/56 ,  C08F20/58 ,  G02B1/041 ,  G02C7/049 ,  C08L33/26

    摘要： An contact lens or intraocular lens (IOL) with very high water content polymers that have increased hydrolytic stability to withstand high temperatures such as autoclave temperatures, 123 C or even higher temperatures while in an aqueous environment comprising at least one polymer comprising one or more monomeric subunits comprising a polymerized acrylamide or methacrylamide group, at least one side group comprising an aliphatic carbon moiety substituted by at least one hydroxyl moiety, wherein the one or more monomeric subunits comprising a polymerized acrylamide or methacrylamide group, at least one side group comprising an aliphatic carbon moiety substituted by at least one hydroxyl moiety, comprise at least 50 wt.% of the polymer.

    摘要翻译： 具有非常高水含量聚合物的隐形眼镜或眼内透镜（IOL）具有增加的水解稳定性以承受高温，例如高压釜温度，123℃或甚至更高的温度，同时在水性环境中，包含至少一种包含一种或多种单体的聚合物 包含聚合的丙烯酰胺或甲基丙烯酰胺基团的亚基，至少一个侧基，其包含被至少一个羟基部分取代的脂族碳部分，其中所述一个或多个单体亚基包含聚合的丙烯酰胺或甲基丙烯酰胺基团，至少一个侧基包含脂族 被至少一个羟基部分取代的碳部分包含至少50重量％ ％的聚合物。

    PRECURSOR COMPOSITION FOR POROUS MEMBRANE AND PROCESS FOR PREPARATION THEREOF, POROUS MEMBRANE AND PROCESS FOR PRODUCTION THEREOF, AND SEMICONDUCTOR DEVICE
    6.
    发明公开
    PRECURSOR COMPOSITION FOR POROUS MEMBRANE AND PROCESS FOR PREPARATION THEREOF, POROUS MEMBRANE AND PROCESS FOR PRODUCTION THEREOF, AND SEMICONDUCTOR DEVICE 有权
    上一页组成多孔膜和生产，多孔膜及其制备方法和半导体器件

    公开(公告)号：EP1867687A1

    公开(公告)日：2007-12-19

    申请号：EP06729340.7

    申请日：2006-03-17

    申请人： ULVAC, INC. ,  National Institute of Advanced Industrial Science and Technology ,  Mitsui Chemicals, Inc.

    发明人： FUJII, Nobutoshi ,  NAKAYAMA, Takahiro ,  KANAYAMA, Toshihiko ,  KOHMURA, Kazuo ,  TANAKA, Hirofumi

    IPC分类号： C09D7/12 ,  C09D183/00 ,  H01L21/316

    CPC分类号： C09D183/04 ,  C08K3/02 ,  C09D7/61 ,  H01L21/02126 ,  H01L21/02142 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  Y10T428/249953

    摘要： A precursor composition for porous film comprising at least one member selected from the group consisting of compounds represented by the following general formulas: Si(OR 1 ) 4 and R a (Si)(OR 2 ) 4-a (in the formulas, R 1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R 2 represents a monovalent organic group; a is an integer ranging from 1 to 3, provided that R, R 1 and R 2 may be the same or different); a heat decomposable organic compound capable of being thermally decomposed at a temperature of not less than 250°C; and at least one element selected from the group consisting of elements each having a catalytic action, and organic solvent. A hydrophobic compound is subjected to a gas-phase polymerization reaction in the presence of a solution of this precursor composition to thus form a hydrophobic porous film having a low dielectric constant, a low refractive index and high mechanical strength. A semiconductor device prepared using the porous film.

    摘要翻译： 的Si（OR 1）4和R A（Si）的（OR 2）4-A（式中，R：为多孔膜，其包括选自由以下通式表示的化合物族群中的至少一个成员的前体组合物 1表示一价有机基团; R darstellt氢原子，氟原子或一价有机基团; R 2表示一价有机基团; a是整数，从1至3，条件没有R，R 1和R 2可以 是相同的或不同的）; 能够在不低于250℃的温度下被热分解的热分解性有机化合物; 和选自元素由具有催化作用的每个，和有机溶剂中选择的至少一种元素。 疏水性化合物进行在该前体组合物的溶液的存在下，气相聚合反应，以形成具有低介电常数，低折射率和高机械强度的疏水性多孔THUS电影。 一种半导体器件，使用该多孔片制备。

    Device and method for manufacturing thin films
    8.
    发明公开
    Device and method for manufacturing thin films 有权
    Vorrichtung und Verfahren zum HerstellendünnerSchichten

    公开(公告)号：EP1505172A3

    公开(公告)日：2005-12-28

    申请号：EP04405491.4

    申请日：2004-08-04

    申请人： ULVAC, INC.

    发明人： Yamada, Takakazu, Ulvac, Inc. ,  Masuda, Takeshi, Ulvac, Inc. ,  Kajinuma, Masahiko, Ulvac, Inc. ,  Nishioka, Yutaka, Ulvac, Inc. ,  Uematsu, Masaki, Ulvac, Inc. ,  Suu, Koukou, Ulvac, Inc.

    IPC分类号： C23C16/455

    CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45572

    摘要： The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space (A) , through a shower head (3) and a film is formed on a heated substrate (S), wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage (4) which is free of any rotational motion or free of any elevating motion, the shower head (3) and a deposition-inhibitory plate (6), that the substrate-supporting stage (4) and the deposition-inhibitory plate (6) are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path (7) through which an inert gas can flow from the upper portion of the gas-exhaust path (7) along the deposition-inhibitory plate (6) and that a lower space (B) is formed on the secondary side of the gas-exhaust path (7).

    摘要翻译： 本发明提供一种薄膜制造装置和薄膜制造方法，其制造能力和生产率优异，能够长时间稳定地连续生产薄膜，同时再生好的薄膜 厚度分布，良好的组成分布和高成膜速率，并且将成膜期间产生的颗粒数量控制到较低水平。 该装置是用作CVD装置的装置，其中成膜气体通过喷淋头（3）从用作反应空间（A）的室的上部引入反应室，并形成膜 在所述加热的基板（S）上，其中所述装置被设计成使得所述上部反应空间由没有任何旋转运动或没有任何升降运动的基板支撑台（4）构成，所述淋浴头（3） 和沉积抑制板（6），所述基板支撑台（4）和所述沉积抑制板（6）被布置成在它们之间形成用作气体排出路径的同心间隙或间隙 （7），惰性气体可以沿着防沉积板（6）从排气通道（7）的上部流动，并且在气体排出通道（7）的次级侧上形成下部空间（B） 排气路径（7）。

    Device and method for manufacturing thin films
    9.
    发明公开
    Device and method for manufacturing thin films 有权
    用于制造薄膜的装置和方法

    公开(公告)号：EP1505172A2

    公开(公告)日：2005-02-09

    申请号：EP04405491.4

    申请日：2004-08-04

    申请人： ULVAC, INC.

    发明人： Yamada, Takakazu, Ulvac, Inc. ,  Masuda, Takeshi, Ulvac, Inc. ,  Kajinuma, Masahiko, Ulvac, Inc. ,  Nishioka, Yutaka, Ulvac, Inc. ,  Uematsu, Masaki, Ulvac, Inc. ,  Suu, Koukou, Ulvac, Inc.

    IPC分类号： C23C16/455

    CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45572

    摘要： The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space (A) , through a shower head (3) and a film is formed on a heated substrate (S), wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage (4) which is free of any rotational motion or free of any elevating motion, the shower head (3) and a deposition-inhibitory plate (6), that the substrate-supporting stage (4) and the deposition-inhibitory plate (6) are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path (7) through which an inert gas can flow from the upper portion of the gas-exhaust path (7) along the deposition-inhibitory plate (6) and that a lower space (B) is formed on the secondary side of the gas-exhaust path (7).

    摘要翻译： 这里，本发明提供一种薄膜制造装置和薄膜制造方法，其批量生产能力和生产率优异，这允许长时间稳定和连续生产薄膜，同时再生良好的薄膜 厚度分布，良好的组成分布和高成膜速度，并将成膜过程中产生的颗粒数量控制在较低水平。 该装置是用作CVD装置的装置，其中成膜气体通过喷头（3）从作为反应空间（A）的室的上部引入到反应室中，并且形成膜 在加热的基底（S）上，其中该装置被设计成使得上部反应空间由没有任何旋转运动或没有任何升降运动的基底支撑台（4）构成，喷淋头（3） 和沉积抑制板（6），所述衬底支撑台（4）和所述防止沉积板（6）布置成在它们之间形成用作排气路径的同心间隙或间隙 （7），惰性气体可以通过该排气通道从排气通道（7）的上部沿着防止沉积板（6）流动，并且在气体排出通道（7）的次级侧上形成下部空间（B） 排气路径（7）。

    Combustion control device
    10.
    发明公开
    Combustion control device 审中-公开
    一种用于控制燃烧

    公开(公告)号：EP1394469A3

    公开(公告)日：2004-08-04

    申请号：EP03405626.7

    申请日：2003-08-29

    申请人： RB Controls Co., Ltd. ,  Rinnai Corporation

    发明人： Nozawa, Koji ,  Honda, Katsutoshi

    IPC分类号： F23N1/00 ,  F23N5/24 ,  F23N5/10

    CPC分类号： F23N5/102 ,  F23N5/20 ,  F23N5/242 ,  F23N2023/08 ,  F23N2027/16 ,  F23N2027/36 ,  F23N2031/10 ,  F23N2035/14

    摘要： A safety circuit 31, which compulsorily closes an on-off valve for supplying a gas to a burner when a microcomputer for performing a combustion control is in an abnormal condition, does not operate unless abnormality occurs to the microcomputer 1, and therefore even when the safety circuit 31 is out of order, an ignition operation is performed as it is. A transistor 4 is not turned off until a fixed time elapses from a start of an ignition sequence in the safety circuit 31, but the fixed time is shortened by a timer acceleration circuit 32, and if the transistor 4 is turned off by a transistor 2 being turned on, the safety circuit 31 is determined as normal, so that the normal ignition sequence is executed thereafter.