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    APPARATUS FOR INJECTING GAS INTO FILM FORMATION APPARATUS
    2.
    发明公开
    APPARATUS FOR INJECTING GAS INTO FILM FORMATION APPARATUS 审中-公开
    用于将气体注入成膜装置的装置

    公开(公告)号：EP3214205A1

    公开(公告)日：2017-09-06

    申请号：EP14905132.8

    申请日：2014-10-29

    申请人： Toshiba Mitsubishi-Electric Industrial Systems Corporation

    发明人： TABATA Yoichiro ,  WATANABE Kensuke ,  NISHIMURA Shinichi

    IPC分类号： C23C16/455 ,  B01J4/00 ,  C23C16/503 ,  H01L21/31 ,  H05H1/24

    CPC分类号： C23C16/45561 ,  B01J4/00 ,  C23C16/045 ,  C23C16/452 ,  C23C16/455 ,  C23C16/4551 ,  C23C16/45559 ,  C23C16/45563 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/45582 ,  C23C16/503 ,  C23C16/513 ,  H01L21/31 ,  H05H1/24

    摘要： The present invention provides a gas jetting apparatus for a film formation apparatus. The gas jetting apparatus is capable of uniformly jetting, even onto a treatment-target object having a high-aspect-ratio groove, a gas into the groove. The gas jetting apparatus (100) according to the present invention includes a gas jetting cell unit (23) for rectifying a gas and jetting the rectified gas into the film formation apparatus (200). The gas jetting cell unit (23) has a fan shape internally formed with a gap (d0) serving as a gas route. A gas in a gas dispersion supply unit (99) enters from a wider-width side of the fan shape into the gap (d0), and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus (200).

    摘要翻译： 本发明提供了一种用于成膜装置的气体喷射装置。 气体喷射装置即使在高纵横比槽的处理对象物上也能够均匀地喷射气体。 根据本发明的气体喷射设备（100）包括气体喷射单元单元（23），用于对气体进行整流并将整流后的气体喷射到成膜设备（200）中。 气体喷射单元（23）具有内部形成有作为气体路径的间隙（d0）的扇形。 气体分散供应单元（99）中的气体从扇形的较宽宽度侧进入间隙（d0），并且由于扇形形状，气体被整流，加速并从较窄范围 将扇形的宽度侧设为成膜装置200。

    SHOWERHEAD FOR VAPOR DEPOSITION
    6.
    发明公开
    SHOWERHEAD FOR VAPOR DEPOSITION 审中-公开
    花洒头气相分离

    公开(公告)号：EP2409320A2

    公开(公告)日：2012-01-25

    申请号：EP10754013.0

    申请日：2010-03-16

    申请人： Alta Devices, Inc.

    发明人： HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas

    IPC分类号： H01L21/205 ,  H01L31/18 ,  H05H1/34

    CPC分类号： C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

    摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a showerhead assembly is provided which includes a body having a centralized channel extending through upper and lower portions of the body and extending parallel to a central axis of the body. The showerhead assembly contains an optional diffusion plate having a first plurality of holes and disposed within the centralized channel, an upper tube plate having a second plurality of holes and disposed within the centralized channel below the diffusion plate, a lower tube plate having a third plurality of holes and disposed within the centralized channel below the upper tube plate, and a plurality of tubes extending from the upper tube plate to the lower tube plate. Each tube is coupled to and in fluid communication with individual holes of the upper and lower tube plates.

    SUBSTRATE SURFACE TREATING APPARATUS
    10.
    发明公开
    SUBSTRATE SURFACE TREATING APPARATUS 审中-公开
    底材表面处理设备

    公开(公告)号：EP1843388A4

    公开(公告)日：2009-04-15

    申请号：EP05819956

    申请日：2005-12-22

    申请人： WATANABE M & CO LTD

    发明人： UMEDA MASARU

    IPC分类号： C23C16/455 ,  H01L21/205

    CPC分类号： C23C16/4557 ,  C23C16/45565 ,  H01L21/67109

    摘要： A substrate surface treating apparatus by which the temperature of a carrier gas can be increased high and thus treatment can be more uniformly performed. An upstream ring is connected to a heating medium inlet for applying a prescribed heating medium, and a downstream ring is connected to a heating medium outlet for ejecting the heating medium. A plurality of heat transmitting paths are connected to the upstream ring and the downstream ring by having flow directions of the adjacent heating medium reaching the downstream ring from the upstream ring are opposite, and a gas is used as the heating medium.