公开(公告)号：EP1905091A1

公开(公告)日：2008-04-02

申请号：EP06787074.1

申请日：2006-07-14

申请人： RJ Mears, LLC

发明人： MEARS, Robert J. ,  KREPS, Scott A.

IPC分类号： H01L29/15 ,  H01L29/10 ,  H01L21/8234 ,  H01L21/336

CPC分类号： H01L29/152 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/7849

摘要： A semiconductor device may include a strained superlattice layer (325) including a plurality of stacked groups of layers, and a stress layer above the strained superlattice layer. Each group of layers of the strained superlattice layer may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

公开(公告)号：EP1644984A1

公开(公告)日：2006-04-12

申请号：EP04809463.5

申请日：2004-06-28

申请人： RJ Mears, LLC

发明人： MEARS, Robert, J. ,  YIPTONG, Jean Augustin Chan Sow Fook ,  HYTHA, Marek ,  KREPS, Scott, A. ,  DUKOVSKI, Ilija

IPC分类号： H01L29/15 ,  H01L29/10

CPC分类号： H01L29/152 ,  B82Y10/00 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/155 ,  H01L29/7833

摘要： A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. Moreover, the energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Accordingly, the superlattice may have a higher charge carrier mobility in the parallel direction than would otherwise be present.

公开(公告)号：EP1644983A1

公开(公告)日：2006-04-12

申请号：EP04785968.1

申请日：2004-06-28

申请人： RJ Mears, LLC

发明人： MEARS, Robert, J. ,  YIPTONG, Jean Augustin Chan Sow Fook ,  HYTHA, Marek ,  KREPS, Scott, A. ,  DUKOVSKI, Ilija

IPC分类号： H01L29/15 ,  H01L29/10

CPC分类号： H01L29/1054 ,  H01L21/823807 ,  H01L29/155 ,  H01L29/7833

摘要： A semiconductor device includes a substrate, and at least one MOSFET adjacent the substrate. The MOSFET may include a superlattice channel that, in turn, includes a plurality of stacked groups of layers. The MOSFET may also include source and drain regions laterally adjacent the superlattice channel, and a gate overlying the superlattice channel for causing transport of charge carriers through the superlattice channel in a parallel direction relative to the stacked groups of layers. Each group of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice channel may have a higher charge carrier mobility in the parallel direction than would otherwise occur.

公开(公告)号：EP1902472A2

公开(公告)日：2008-03-26

申请号：EP06752162.5

申请日：2006-05-02

申请人： RJ Mears, LLC

发明人： MEARS, Robert ,  HYTHA, Marek ,  KREPS, Scott, A. ,  STEPHENSON, Robert, John ,  YIPTONG, Jean, Austin, Chan, S.F. ,  DUKOVSKI, Ilija ,  RAO, Kalipatnam, Vivek ,  HALILOV, Samed ,  HUANG, Xiangyang

IPC分类号： H01L29/15

CPC分类号： H01L29/152 ,  B82Y10/00 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/155 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

摘要： A semiconductor device may include a semiconductor substrate and at least one active device adjacent the semiconductor substrate. The at least one active device may include an electrode layer, a high-K dielectric layer underlying the electrode layer and in contact therewith, and a superlattice underlying the high-K dielectric layer opposite the electrode layer and in contact with the high-K dielectric layer. The superlattice may include a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

公开(公告)号：EP1794805A1

公开(公告)日：2007-06-13

申请号：EP05796396.9

申请日：2005-09-08

申请人： RJ Mears, LLC

发明人： MEARS, Robert J. ,  STEPHENSON, Robert John

IPC分类号： H01L31/0352 ,  H01L31/0232 ,  H01L31/102 ,  H01L33/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/4202 ,  H01L31/173

摘要： An integrated circuit may include at least one active optical device including a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The integrated circuit may further include a waveguide coupled to the at least one active optical device.

公开(公告)号：EP1644982A1

公开(公告)日：2006-04-12

申请号：EP04785967.3

申请日：2004-06-28

申请人： RJ Mears, LLC

发明人： MEARS, Robert, J. ,  YIPTONG, Jean, Augustin, Chan, Sow, Fook ,  HYTHA, Marek ,  KREPS, Scott, A. ,  DUKOVSKI, Ilija

IPC分类号： H01L29/15 ,  H01L29/10

CPC分类号： H01L29/155 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/7833

摘要： A method is for making a semiconductor device by forming a superlattice that, in turn, includes a plurality of stacked groups of layers. The method may also include forming regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice may have a higher charge carrier mobility in the parallel direction than would otherwise occur. The superlattice may also have a common energy band structure therein.

公开(公告)号：EP1644981A2

公开(公告)日：2006-04-12

申请号：EP04785966.5

申请日：2004-06-28

申请人： RJ Mears, LLC

发明人： MEARS, Robert J. ,  YIPTONG, Jean Augustin Chan Sow Fook ,  HYTHA, Marek ,  KREPS, Scott A. ,  DUKOVSKI, Ilija

IPC分类号： H01L29/15 ,  H01L29/10

CPC分类号： H01L29/152 ,  B82Y10/00 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/155 ,  H01L29/7833

摘要： A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. Moreover, the energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Accordingly, the superlattice may have a higher charge carrier mobility in the parallel direction than would otherwise be present.