公开(公告)号：EP4270459A1

公开(公告)日：2023-11-01

申请号：EP21914255.1

申请日：2021-12-27

申请人： Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

发明人： LIN, Jian ,  ZHANG, Hao ,  WANG, Jing ,  WANG, Zhenguo ,  LUO, Qun ,  GONG, Chao ,  MA, Changqi

IPC分类号： H01L21/768 ,  H01L21/288 ,  H01L23/528 ,  H01L31/18

摘要： The present disclosure discloses an interconnected electrode structure, a method of manufacturing same, and a use of same. The interconnected electrode structure comprises an insulating base material, a through hole, a first conductive body, and a second conductive body. The insulating base material includes a first surface and a second surface which face away from each other; the through hole penetrates through the insulating base material in a thickness direction; the first conductive body is formed by conductive slurry that enters the through hole from an opening of the through hole on the first surface; and the second conductive body is formed by a second conductive material that enters the through hole from an opening of the through hole on the second surface, and is electrically combined with the first conductive body to form a conductive channel in the insulating base material. The interconnected electrode structure provided in the present disclosure is simple, has good electrical conductivity, high yield, simple manufacturing technology and low cost.

公开(公告)号：EP4178053A1

公开(公告)日：2023-05-10

申请号：EP21894030.2

申请日：2021-11-19

申请人： Suzhou Institute of Nano-tech and Nano-bionics (SINANO) Chinese Academy of Sciences

发明人： ZHANG, Ruiying

IPC分类号： H01S5/14 ,  H01S5/125 ,  H01S5/12

摘要： A narrow linewidth laser is disclosed by the present disclosure, comprising a passive ring resonant cavity, an FP resonant cavity, and a first gain region. The passive ring resonant cavity and the FP resonant cavity are combined to form an M-Z (Mach-Zehnder interference structure) compound external cavity structure, the M-Z compound external cavity structure is at least used for providing wavelength selection and narrowing laser linewidth, and the first gain region is provided on the outer side of the M-Z compound external cavity structure and is used for providing a gain for the whole laser. The narrow linewidth laser provided by the present disclosure is simple in structure, high in side-mode suppression ratio, narrow in linewidth, and high in output power. By further integrating a PN junction region or MOS junction region, broadband and rapid tuning with low power consumption can also be achieved, and tuning management is simple; moreover, monolithic integration can avoid the butt-joint coupling loss of a gain region and a waveguide region, and further narrow linewidth limitation; and meanwhile, such narrow linewidth laser can be completely fabricated by semiconductor process in integration, which results in that the device is lower in cost, higher in stability and reliability, and higher in severe environment resistance.

公开(公告)号：EP4092095A1

公开(公告)日：2022-11-23

申请号：EP21920841.0

申请日：2021-12-21

申请人： Suzhou Institute of Nano-tech and Nano-bionics (SINANO) Chinese Academy of Sciences

发明人： WANG, Qiangbin ,  YANG, Hongchao

IPC分类号： C09K11/02 ,  C09K11/88

摘要： The present disclosure discloses fluorescent quantum dots as well as a preparation method and use thereof. The preparation method comprises: carrying out solvothermal reaction on a first evenly mixed reaction system containing a silver source, a negative ion source and a weakly polar solvent to prepare a silver-based quantum dots precursor; and carrying out ion exchange reaction on a second evenly mixed reaction system containing the silver-based quantum dots precursor, a negative ion source and/or a metal positive ion source to obtain alloyed fluorescent quantum dots with a fluorescence emission peak wavelength of 500-1700 nm and an absolute quantum efficiency of more than 85%. In the present disclosure, the silver-based quantum dots are prepared through a simple high-temperature solvothermal method and then the alloyed quantum dots are obtained by the ion exchange method, and therefore the synthesis process is simple and controllable; the obtained fluorescent quantum dots are relatively high yield, and can be prepared on large scale, and have adjustable fluorescence emission from visible to near-infrared region, and excellent photostability; meanwhile, the obtained fluorescent quantum dots contain no any toxic heavy metal elements, and have a wide disclosure prospect in the fields of biological imaging, near-infrared devices and the like.

公开(公告)号：EP3878809A1

公开(公告)日：2021-09-15

申请号：EP20760326.7

申请日：2020-01-02

申请人： Suzhou Institute of Nano-tech and Nano-bionics (SINANO) Chinese Academy of Sciences

发明人： ZHANG, Xuetong ,  LI, Guangyong

IPC分类号： C01B21/064 ,  B82Y40/00

摘要： The present application discloses a flexible boron nitride nanoribbon aerogel and a preparation method thereof. The flexible boron nitride nanoribbon aerogel has a interconnected three-dimensional porous network structure which is formed by mutually twining and contacting boron nitride nanoribbons and consists of macropores having a pore diameter of more than 50 nm, mesopores having a pore diameter of 2-50 nm and micropores having a pore diameter of less than 2 nm. The preparation method comprises: performing high-temperature dissolution on boric acid and a nitrogen-containing precursor to form a transparent precursor solution, preparing the transparent precursor solution into precursor hydrogel, subsequently drying and performing high-temperature pyrolysis to obtain the flexible boron nitride nanoribbon aerogel. The boron nitride nanoribbon aerogel of the present application has excellent flexibility and resilience, can withstand different forms of loads from the outside within a wide temperature range and has resilience. Furthermore, the preparation method is simple in preparation process, mild in reaction conditions, easy to operate, low in cost, green and free of pollution, and is capable of realizing continuous production.

公开(公告)号：EP3299802A1

公开(公告)日：2018-03-28

申请号：EP15892994.3

申请日：2015-06-18

申请人： Suzhou Institute of Nano-tech and Nano-bionics (SINANO) Chinese Academy of Sciences

发明人： ZHANG, Yuegang ,  RONG, Genlan ,  MA, Shuo

IPC分类号： G01N23/22 ,  G01N1/28

摘要： A chip assembly for measuring an electrochemical reaction on a solid-liquid phase interface in situ, comprising a first electrode (310), a second electrode (320), a first insulating film (510), a second insulating film (520), a third insulating film (530), a fourth insulating film (540) and an upper chip (100) and a lower chip (200) which are oppositely arranged and of which two sides are correspondingly combined in a sealing manner; a through hole (110) is provided on the upper chip (100); the first insulating film (510) under the through hole (110) is provided with the first electrode (310); a groove (210) opposite to the through hole (110) is provided on the lower chip (200); and the fourth insulating film (540) arranged at one side of the groove (210) is provided with the second electrode (320). The chip assembly dispenses with a specially-made sample rod, thereby substantially reducing test cost; and meanwhile, a lattice structure of a first electrode is also beneficial for observing topography change of a to-be-tested sample.

摘要翻译： 一种芯片组件，用于原位测量固液相界面上的电化学反应，包括第一电极（310），第二电极（320），第一绝缘膜（510），第二绝缘膜（520）， 第三绝缘膜（530），第四绝缘膜（540）和上芯片（100）和下芯片（200），所述上芯片（100）和下芯片（200）相对设置并且其两侧以密封方式相应地组合; 所述上芯片（100）上设有通孔（110）。 在所述通孔（110）下方的所述第一绝缘膜（510）设置有所述第一电极（310）; 所述下芯片（200）上设置有与所述通孔（110）相对的凹槽（210）。 并且布置在槽（210）的一侧的第四绝缘膜（540）设置有第二电极（320）。 芯片组件免除了特制的样品棒，从而大大降低了测试成本; 同时第一电极的晶格结构对于观察待测样品的形貌变化也是有益的。

公开(公告)号：EP3157080A1

公开(公告)日：2017-04-19

申请号：EP15807123.3

申请日：2015-06-05

申请人： Suzhou Institute of Nano-tech and Nano-bionics (SINANO) Chinese Academy of Sciences

发明人： ZHANG, Yuegang ,  QIU, Yongcai ,  LI, Wanfei ,  LI, Guizhu ,  HOU, Yuan ,  LIU, Meinan ,  ZHOU, Lisha ,  YE, Fangmin ,  LI, Hongfei

IPC分类号： H01M4/36

CPC分类号： H01M4/366 ,  B01J13/08 ,  H01M4/38 ,  H01M4/5815 ,  H01M4/587 ,  H01M4/625 ,  H01M2004/028

摘要： The invention provides a nitrogen-doped graphene coated nano sulfur positive electrode composite material, a preparation method, and an application thereof. The composite material includes: an effective three-dimensional conductive network formed by overlapping of nitrogen-doped graphenes, and nano sulfur particles coated by nitrogen doped graphene layers evenly. The preparation method includes: dispersing nitrogen-doped graphenes in a liquid-phase reaction system including at least sulfur source and acid,and depositing nano sulfur particles by an in-situ chemical reaction of the sulfur source and the acid, thereby preparing the positive electrode composite material. The positive electrode composite material of the invention has a high conductivity, a high sulfur utilization rate, and a high rate, thereby restraining the dissolution and shuttle effect in the lithium sulfur batteries, and enhancing the cyclic performance of the batteries.

摘要翻译： 本发明提供一种掺氮石墨烯纳米硫正极复合材料，其制备方法及其应用。 复合材料包括：通过氮掺杂的石墨烯重叠形成的有效的三维导电网络，以及由氮掺杂的石墨烯层均匀涂覆的纳米硫颗粒。 该制备方法包括：将含氮掺杂的石墨烯分散在至少包含硫源和酸的液相反应体系中，并通过硫源和酸的原位化学反应沉积纳米硫颗粒，从而制备正极 复合材料。 本发明的正极复合材料具有高导电性，高硫利用率和高速率，从而抑制了锂硫电池中的溶解和穿梭效应，并提高了电池的循环性能。

公开(公告)号：EP4318596A1

公开(公告)日：2024-02-07

申请号：EP22906029.8

申请日：2022-10-11

申请人： Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

发明人： ZHOU, Yu ,  SUN, Qian ,  LI, Qian ,  ZHANG, Xinkun ,  LIU, Jianxun ,  ZHAN, Xiaoning ,  ZHONG, Yaozong ,  YANG, Hui

IPC分类号： H01L29/778 ,  H01L21/335

摘要： The present application discloses a high-electron-mobility transistor structure as well as a fabricating method and use thereof. The high-electron-mobility transistor structure includes an epitaxial structure as well as a source electrode, a drain electrode and a gate electrode, wherein the epitaxial structure includes a first semiconductor layer and a second semiconductor layer, a carrier channel is formed between the first semiconductor layer and the second semiconductor layer, and the source electrode is electrically connected with the drain electrode through the carrier channel; a coincidence rate between the orthographic projection of the gate foot of the gate electrode on the first semiconductor layer and the orthographic projection of the second semiconductor layer on the first semiconductor layer is more than 80%.The GaN electronic device of the present application has no gate-source access regions and gate-drain access regions, and the entire carrier channel is effectively regulated by the gate electrode, and non-linear effect induced due to degeneration of a R GS resistor can be eliminated on the basis of realizing speed saturation and reducing a knee voltage of a device.

公开(公告)号：EP4122496A1

公开(公告)日：2023-01-25

申请号：EP21902268.8

申请日：2021-11-03

申请人： Suzhou Institute of Nano-tech and Nano-bionics (SINANO) Chinese Academy of Sciences

发明人： FEI, Hao ,  JI, Shuangshuang

IPC分类号： A61K47/42 ,  A61K9/51 ,  A61P35/00 ,  B82Y40/00

摘要： The present application relates to a polypeptide albumin nanoparticle, a preparation method therefor, and an application thereof. The polypeptide albumin nanoparticle is formed by assembling a cationic amphiphilic polypeptide and an albumin. The hydrophobic part of the cationic amphiphilic polypeptide binds to the albumin, and the positive charges carried by the cationic amphiphilic polypeptide can interact with the negative charges on the surface of the albumin, so that the cationic amphiphilic polypeptide and the albumin are assembled to form the polypeptide albumin nanoparticle. In the polypeptide albumin nanoparticle, the cationic amphiphilic polypeptide and the albumin interact with each other, so that stability is improved, hemolytic toxicity is reduced, a high targeting property is provided, tumor cell oncosis can be induced, and the anti-tumor immune response of the body is induced, thereby achieving the effect of providing a high targeting property and efficiently killing tumor cells.

公开(公告)号：EP4030469A1

公开(公告)日：2022-07-20

申请号：EP21815877.2

申请日：2021-09-28

申请人： Tencent Technology (Shenzhen) Company Limited ,  Suzhou Institute of Nano-tech and Nano-bionics (SINANO) Chinese Academy of Sciences

发明人： ZHANG, Wenlong ,  HUAI, Sainan ,  ZHENG, Yarui ,  FENG, Jiagui ,  XIONG, Kanglin ,  DING, Sunan

IPC分类号： H01L21/768 ,  H01L21/764

摘要： This application discloses a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip, and relates to the field of circuit structures. The method includes: depositing a bridge brace material defining a shape of the air bridge on a substrate; coating a patterned photoresist on the substrate and the bridge brace material; performing exposure patterning treatment on the patterned photoresist based on an opening requirement of the air bridge, the opening requirement being used for indicating a position requirement of an opening on a deck of the air bridge; developing the exposure patterning-treated patterned photoresist; and depositing a bridge material on the developed bridge brace material, to obtain the air bridge having the opening. By performing exposure patterning treatment on a patterned photoresist, an opening structure running through a deck is arranged on the deck. In the process of fabricating an air bridge, a bridge brace material is released through the opening structure, and an etching material is released from a position of an opening to etch the bridge brace material. Therefore, the complete release of the bridge brace material is ensured, and bridge brace material residues are prevented from being left inside the bridge hole.

公开(公告)号：EP4012757A1

公开(公告)日：2022-06-15

申请号：EP21838964.1

申请日：2021-10-14

申请人： Tencent Technology (Shenzhen) Company Limited ,  Suzhou Institute of Nano-tech and Nano-bionics (SINANO) Chinese Academy of Sciences

发明人： ZHANG, Wenlong ,  YANG, Chuhong ,  HUAI, Sainan ,  ZHENG, Yarui ,  ZHANG, Shengyu ,  FENG, Jiagui ,  XIONG, Kanglin ,  WU, Biao ,  HUANG, Yongdan ,  CHEN, Xiao ,  DING, Sunan

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/3205

摘要： The invention discloses an air bridge structure and a manufacturing method thereof, and a superconducting quantum chip and a manufacturing method thereof. The manufacturing method for an air bridge structure includes: providing a substrate and forming a first photoresist structure on the substrate, the first photoresist structure including a first photoresist layer and a second photoresist layer and being provided with a first opening, and the first opening including a first sub-opening that runs through the second photoresist layer and that includes an undercut structure and a second sub-opening that runs through the first photoresist layer; depositing an inorganic bridge supporting material layer on the substrate on which the first photoresist structure is formed, and stripping the first photoresist structure to form a bridge supporting structure located at the first opening; forming a second photoresist structure on a side of the substrate on which the bridge supporting structure is formed, the second photoresist structure including a third photoresist layer and being provided with a second opening, the bridge supporting structure being located in the second opening, and the second opening being used for forming the air bridge structure; and depositing an air bridge material layer on the substrate on which the second photoresist structure is formed, stripping the second photoresist structure, and releasing the bridge supporting structure to obtain the air bridge structure.