VARIABLE WATTAGE CONTROL SYSTEM
    1.
    发明公开
    VARIABLE WATTAGE CONTROL SYSTEM 审中-公开
    可变功率控制系统

    公开(公告)号:EP1625448A4

    公开(公告)日:2008-02-20

    申请号:EP03793232

    申请日:2003-08-20

    IPC分类号: H05B1/02 G05D23/19 G05D23/24

    摘要: A variable wattage control system is disclosed for providing varying wattage levels for a power-receiving device. The power-receiving device is operatively associated with a sensing means that communicates with a temperature controller for comparing the sensed temperature with a predetermined set point. If the sensed temperature falls outside the set point, the temperature controller directs a power control means to turn on the heating element at a specific wattage level. The variable wattage control system may include a micro-controller contained in either the temperature controller, power controller or a separate module which determines a power output scaling factor based on the percentage of the full line voltage being applied to the power-receiving device and then scaling the power output. The power output scaling factor determines the maximum percentage power to be applied to the power-receiving device such that a single device may be driven at different power levels for various applications.

    HOT RUNNER HEATER DEVICE AND METHOD OF MANUFACTURE THEREOF
    2.
    发明公开
    HOT RUNNER HEATER DEVICE AND METHOD OF MANUFACTURE THEREOF 审中-公开
    HEISSKANALHEIZVORHTHTUNG UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号:EP1490199A4

    公开(公告)日:2007-05-23

    申请号:EP03714117

    申请日:2003-03-13

    发明人: SUTORIUS RICH

    IPC分类号: H05B3/42 B29C45/27

    摘要: A heater device (10) used for mold injection processes and related method for manufacturing the same is disclosed. The heater device (10) comprises an inner sleeve (12) having a hollow tubular body with opposed flanges (36) formed at either end thereof and a resistive element (16) wound around the body of the inner sleeve (12). In assembly, the inner sleeve (12) is disposed inside and engaged to an outer sleeve (14) having a hollow tubular body with opposed openings (50, 52) that communicate with a cavity (46) defined between the inner and outer sleeves (12, 14). The outer sleeve (14) further defines a first aperture (44) for permitting connection of terminal leads to the resistive element (16) inside the outer sleeve (14) during manufacturing. During manufacture, a slurry of ceramic insulation material (62) is injected through a second aperture (45) in order to completely fill the cavity (46) and encase the resistive element (16).

    摘要翻译: 公开了一种用于模具注塑工艺的加热器装置(10)及其制造方法。 加热器装置(10)包括具有中空管状主体的内套筒(12),所述中空管状主体具有在其任一端形成的相对的凸缘(36)和围绕内套筒(12)的主体缠绕的电阻元件(16)。 在装配时,内套筒12设置在内部并接合到具有中空管状体的外套筒14上,所述中空管状体具有与内套筒和外套筒之间限定的空腔46相通的相对开口50,52 12,14)。 外部套筒(14)还限定了用于允许在制造期间将端子引线连接到外部套筒(14)内的电阻元件(16)的第一孔(44)。 在制造过程中,通过第二孔(45)注入陶瓷绝缘材料浆料(62),以完全填充空腔(46)并包住电阻元件(16)。

    MULTI-ZONE CERAMIC HEATING SYSTEM AND METHOD OF MANUFACTURE THEREOF
    5.
    发明公开
    MULTI-ZONE CERAMIC HEATING SYSTEM AND METHOD OF MANUFACTURE THEREOF 有权
    多个区域的陶瓷加热系统及其制造方法

    公开(公告)号:EP1621048A4

    公开(公告)日:2007-04-11

    申请号:EP04711141

    申请日:2004-02-13

    IPC分类号: H05B3/14 H01L21/00 H05B3/28

    摘要: An improved heating system (10) for heating a semiconductor wafer during fabrication in a corrosive manufacturing environment is disclosed. The system (10) includes a novel ceramic heater (12) made of layered ceramic substrate (16) that has a plurality of heating elements (44) and temperature sensor arrangement (38) completely and directly embedded within the ceramic substrate (16) of the ceramic heater (12). The heating elements (44) and the temperature sensor arrangement (38) are constructed of a molybdenum and aluminum nitride composite that provides a low temperature coefficient of resistance which improves the operating efficiency of the ceramic heater (12). In operation, the temperature sensor arrangement (38) transmits temperature readings to a microprocessor (14) capable of controlling the heating elements (44) in such a manner as to provide a constant and uniform temperature distribution along the entire surface of the semiconductor wafer.