HIGH PURITY TUNGSTEN HEXACHLORIDE AND METHOD FOR MAKING SAME
    1.
    发明公开
    HIGH PURITY TUNGSTEN HEXACHLORIDE AND METHOD FOR MAKING SAME 审中-公开
    赫尔辛基·沃尔夫哈佛·哈佛大使馆(VERFAHREN ZUR HERSTELLUNG DAVON)

    公开(公告)号:EP3081667A2

    公开(公告)日:2016-10-19

    申请号:EP16165675.6

    申请日:2016-04-15

    IPC分类号: C23C16/08 C23C16/44

    摘要: Condensable metal halide materials, such as but not limited to tungsten chloride (WCl 6 ), can be used deposit films metal or metal containing films in a chemical vapor deposition (CVD) or atomic layer deposition process. Described herein are high purity compositions comprising condensable materials and methods to purify condensable materials. In one aspect, there is provided a composition comprising: tungsten hexachloride which is substantially free of at least one impurity and wherein the tungsten hexachloride comprises at least 90%, preferably 95 % and more preferably 99 % by weight or greater of a β- WCl 6 and 5% by weight or less of the α- WCl 6 as measured by X-ray diffraction.

    摘要翻译: 可以在化学气相沉积(CVD)或原子层沉积工艺中使用可冷凝金属卤化物材料,例如但不限于氯化钨(WCl 6))沉积膜金属或含金属的膜。 本文描述的是包含可冷凝材料的高纯度组合物和用于纯化可冷凝材料的方法。 一方面,提供了一种组合物,其包含:基本上不含至少一种杂质的六氯化铬,其中六氯化钨包含至少90%,优选95%,更优选99重量%以上的2 -WCl 6和5重量%以下的± - WCl 6,通过X射线衍射测定。