公开(公告)号：EP0219994A2

公开(公告)日：1987-04-29

申请号：EP86307481.1

申请日：1986-09-30

申请人： AMERICAN MICROSYSTEMS, INCORPORATED

发明人： Jain, Pardeep K. ,  Jain, Babu Lal ,  Briner, Michael S.

IPC分类号： G05F3/24

CPC分类号： H03K3/011 ,  G05F3/245 ,  H03K3/03 ,  H03L1/02 ,  Y02P80/15

摘要： A temperature compensated complementary metal-insulator-semiconductor oscillator receives a temperature independent reference voltage from an external source. The temperature independent reference voltage is attenuated and summed with a threshold voltage in order to bias a gate electrode of MOSFET. A bipolar p-n junction diode is connected to the MOSFET at a source electrode in order to bias the MOSFET with a temperature dependent forward voltage drop to compensate for temperature variations therein. The MOSFET controls a temperature independent current. A current mirror assembly receives the current and controls a Schmitt trigger oscillator. The Schmitt trigger oscillator generates a signal having a temperature independent constant period.

公开(公告)号：EP0219994A3

公开(公告)日：1988-04-27

申请号：EP86307481

申请日：1986-09-30

申请人： AMERICAN MICROSYSTEMS, INCORPORATED

发明人： Jain, Pardeep K. ,  Jain, Babu Lal ,  Briner, Michael S.

IPC分类号： G05F03/24

CPC分类号： H03K3/011 ,  G05F3/245 ,  H03K3/03 ,  H03L1/02 ,  Y02P80/15

摘要： A temperature compensated complementary metal-insulator-semiconductor oscillator receives a temperature independent reference voltage from an external source. The temperature independent reference voltage is attenuated and summed with a threshold voltage in order to bias a gate electrode of MOSFET. A bipolar p-n junction diode is connected to the MOSFET at a source electrode in order to bias the MOSFET with a temperature dependent forward voltage drop to compensate for temperature variations therein. The MOSFET controls a temperature independent current. A current mirror assembly receives the current and controls a Schmitt trigger oscillator. The Schmitt trigger oscillator generates a signal having a temperature independent constant period.