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    Plasma displays employing low electron affinity electrode materials
    3.
    发明公开
    Plasma displays employing low electron affinity electrode materials 失效
    等离子体电解质

    公开(公告)号：EP0764965A2

    公开(公告)日：1997-03-26

    申请号：EP96306568.5

    申请日：1996-09-10

    Applicant: AT&T Corp.

    Inventor： Jin, Sungho ,  Zhu, Wei ,  Kochanski, Gregory Peter

    IPC: H01J17/06 ,  H01J17/49

    CPC classification number: H01J11/12 ,  H01J11/22 ,  H01J17/066 ,  H01J2211/225 ,  H01J2217/49

    Abstract: Improved plasma displays utilize electrodes comprising low electron affinity (LEA) materials such as diamond. In dc displays the LEA materials are disposed on the cathode. In ac displays the LEA materials are disposed on the dielectric layers of both electrodes. The improved displays exhibit reduced operating voltage, higher resolution, and enhanced robustness.

    Abstract translation: 改进的等离子体显示器利用包括诸如金刚石的低电子亲和力（LEA）材料的电极。 在直流显示器中，LEA材料设置在阴极上。 在交流显示中，LEA材料设置在两个电极的电介质层上。 改进的显示器显示出降低的操作电压，更高的分辨率和增强的鲁棒性。

    Method for making a pillar structure for field emission devices
    4.
    发明公开
    Method for making a pillar structure for field emission devices 失效
    Herstellungsverfahren einersäulenförmigenStrukturfürFeldemissionsvorrichtungen

    公开(公告)号：EP0725416A1

    公开(公告)日：1996-08-07

    申请号：EP96300478.3

    申请日：1996-01-24

    Applicant: AT&T Corp.

    Inventor： Chandross, Edwin Arthur ,  Kochanski, Gregory Peter ,  Jin, Sungho ,  Thomson, John Jr. ,  Zhu, Wei

    IPC: H01J9/18

    CPC classification number: H01J9/242 ,  H01J31/123 ,  H01J2329/863 ,  H01J2329/8635 ,  H01J2329/864

    Abstract: A pillar structure has a substantially longer surface path length from negative to positive electrodes to resist breakdown in a high voltage environment. The processing and assembly methods permit low-cost manufacturing of high breakdown-voltage, dielectric pillars for the flat panel display.
    The method for making an electron field emission device comprising an emitter cathode electrode, a anode electrode and a plurality of insulating pillars for separating said electrodes, comprising the steps of:
       providing said electrodes;
       forming a mold having grooved wall cavities;
       molding dielectric pillars in said cavities, said pillars having grooved outer surfaces;
       adhering said pillars to one of said electrodes; and
       finishing said device.

    Abstract translation: 柱结构具有从负极到正极的基本上更长的表面路径长度，以在高电压环境中抵抗击穿。 处理和组装方法允许低成本制造用于平板显示器的高击穿电压，介电柱。 一种用于制造电子发射器件的方法，包括发射极阴极电极，阳极电极和用于分离所述电极的多个绝缘柱，包括以下步骤：提供所述电极; 形成具有开槽壁腔的模具; 在所述空腔中模制介质柱，所述柱具有开槽的外表面; 将所述柱粘附到所述电极之一; 并完成所述设备。

    Field emission devices employing emitters on metal foil and methods for making such devices
    5.
    发明公开
    Field emission devices employing emitters on metal foil and methods for making such devices 失效
    具有用于产生这些设备上的金属箔的发射器和方法场致发射装置

    公开(公告)号：EP0773574A1

    公开(公告)日：1997-05-14

    申请号：EP96307791.2

    申请日：1996-10-29

    Applicant: AT&T Corp.

    Inventor： Jin, Sungho ,  Zhu, Wei ,  Kochanski, Gregory Peter

    IPC: H01J9/02

    CPC classification number: H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457

    Abstract: The present invention provides improved methods for making field emission devices by which one can pre-deposit and bond the diamond particles or islands on a flexible metal foil at a desirably high temperature (e.g., near 900° C or higher), and then subsequently attach the high-quality- emitter-coated conductor foil onto the glass substrate. In addition to maximizing the field emitter properties, these methods provide high-speed, low-cost manufacturing. Since the field emitters can be pre-deposited on the metal foil in the form of long continuous sheet wound as a roll, the cathode assembly can be made by a high-speed, automated bonding process without having to subject each of the emitter-coated glass substrates to plasma heat treatment in a vacuum chamber.

    Abstract translation: 本发明提供了用于制备由其中一个可以预先存在一个理想的高温粘结上的柔性金属箔的金刚石颗粒或岛（例如，靠近900℃或更高），并随后附加场发射器件的改进的方法 高质量 - 发射极涂覆导体箔到玻璃基材上。 除了最大化场发射器的特性，合成方法提供高速，低成本的制造。 由于场致发射体，可以在金属箔上的长的连续片材卷绕成卷的形式预先沉积，阴极组件可以通过高速，自动化的接合方法来制造，而不必经受每个的发射极 - 涂覆的 玻璃基板在真空室中等离子体热处理。

    Field emission devices employing activated diamond particle emitters and methods for making same
    6.
    发明公开
    Field emission devices employing activated diamond particle emitters and methods for making same 失效
    Feldemissionsvorrichtungen unter Verwendung von aktivierten emittierenden Diamantpartikelnherstellungsverfahren

    公开(公告)号：EP0725415A2

    公开(公告)日：1996-08-07

    申请号：EP96300474.2

    申请日：1996-01-24

    Applicant: AT&T Corp.

    Inventor： Jin, Sungho ,  Zhu, Wei ,  Kochanski, Gregory P.

    IPC: H01J9/02

    CPC classification number: H01J9/025 ,  H01J23/06 ,  H01J2201/30403 ,  H01J2201/30457

    Abstract: A field emission device is made by pre-activating ultra-fine diamond particles before applying them to the device substrate. This initial pre-activation increases manufacturing speed and reduces cost and reduces potential damage to the device substrate from exposure to high temperature hydrogen plasma.
    A method for making an electron field emission device comprises the steps of:
       providing particles comprising diamonds;
       having said diamonds predominantly comprising diamonds having maximum dimensions in the range of 5-10,000 nm;
       exposing said particles to a plasma-containing hydrogen at a temperature in excess of 300°C;
       adhering said particles to a substrate having a conductive portion; and
       disposing an electrode adjacent said diamond particles.

    Abstract translation: 通过在将它们施加到器件衬底之前预激活超细金刚石颗粒来制造场致发射器件。 这种初始预激活增加了制造速度并且降低了成本并减少了暴露于高温氢等离子体对器件衬底的潜在损害。 一种制造电子场发射装置的方法包括以下步骤：提供包括金刚石的颗粒; 具有主要包含最大尺寸在5-10,000nm范围内的金刚石的金刚石; 在超过300℃的温度下将所述颗粒暴露于含等离子体的氢气中; 将所述颗粒粘附到具有导电部分的基材上; 并且将电极设置在所述金刚石颗粒附近

    Field emission devices employing enhanced diamond field emitters
    9.
    发明公开
    Field emission devices employing enhanced diamond field emitters 失效
    Feldemissionsvorrichtungen unter Verwendung von verb desserten Diamant-Feldeffektemittern

    公开(公告)号：EP0709869A1

    公开(公告)日：1996-05-01

    申请号：EP95307422.6

    申请日：1995-10-18

    Applicant: AT&T Corp.

    Inventor： Jin, Sungho ,  Seibles, Lawrence ,  Kochanski, Gregory Peter ,  Zhu, Wei

    IPC: H01J1/30 ,  H01J9/02 ,  H01J31/12

    CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

    Abstract: Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds -- diamonds grown or treated to increase the concentration of defects -- have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm⁻¹ broadened by a full width at half maximum ΔK in the range 5-15cm⁻¹ (and preferably 7 - 11 cm⁻¹). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm or more at a low applied field of 25 V/µm or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10µm in diameter at fields of 15 V/µm or less.

    Abstract translation: 申请人已经发现了用于制造，处理和使用金刚石的方法，其大大增强了它们的低电压发射能力。 具体来说，申请人已经发现，富含缺陷的钻石 - 生长或处理的钻石以增加缺陷的浓度 - 具有增强的低电压发射性能。 富含缺陷的金刚石的特征在于拉曼光谱学，在1332cm -1处的金刚石峰宽度在5-15cm -1范围内的半峰最大值DELTA K的全宽（优选7-11） 厘米< - > <1>）。 这种富含缺陷的金刚石可以在25V /μm或更低的低施加电场下发射0.1mA / mm 2或更大的电子电流密度。 特别有利的结构在15V /μm或更小的场中使用直径小于10μm的岛或颗粒阵列中的这种金刚石。

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