公开(公告)号：EP2218108A2

公开(公告)日：2010-08-18

申请号：EP08847606.4

申请日：2008-11-06

申请人： Advanced Surface Technology B.V.

发明人： NANU, Marian ,  MEESTER, Bernard

IPC分类号： H01L31/032

CPC分类号： H01L31/032 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A thin-film solar cell comprising homojunctions between quaternary chalcogenide compounds is proposed. By using a chalcogenide layer of for example a Cu
2 A
X(d) B
Y(d) Z
4 compound, or more generally a Cu
c A
X(d) B
Y(d) Z
s compound, with amounts of A and B that vary with depth, d, in the chalcogenide layer, sufficient freedom is obtained to realize a transition from n-type to p-type conductivity in the chalcogenide layer without changing the lattice structure and with minimum change of lattice constant. This allows to obtain solar cells with good energy conversion efficiencies.