专利检索 ap:("Analog Devices Global Unlimited Company") AND inv:"COYNE, Edward John" 第 1 页

1.

发明授权
LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权

公开(公告)号：EP3477706B1

公开(公告)日：2020-08-26

申请号：EP18200790.6

申请日：2018-10-16

申请人： Analog Devices Global Unlimited Company

发明人： COYNE, Edward John

IPC分类号： H01L29/808 , H01L29/06 , H01L29/10 , H01L21/337

2.

发明公开
DIFFUSION TEMPERATURE SHOCK MONITOR 审中-公开

公开(公告)号：EP3638996A1

公开(公告)日：2020-04-22

申请号：EP18731405.9

申请日：2018-06-12

申请人： Analog Devices Global Unlimited Company

发明人： COYNE, Edward John

IPC分类号： G01K3/00 , G01K3/04 , G01K7/01

3.

发明公开
LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR 审中-公开

公开(公告)号：EP3477706A1

公开(公告)日：2019-05-01

申请号：EP18200790.6

申请日：2018-10-16

申请人： Analog Devices Global Unlimited Company

发明人： COYNE, Edward John

IPC分类号： H01L29/808 , H01L29/06 , H01L29/10 , H01L21/337

摘要： A JFET is provided with a very low gate current. In tests the excess gate current above the theoretical minimum current for a similarly sized reverse biased p-n junction was not observed. The JFET includes a lightly doped top gate and doped regions beneath the drain of the JFET.