公开(公告)号：EP2023398A3

公开(公告)日：2011-04-13

申请号：EP08019935.9

申请日：2004-09-09

申请人： Asahi Kasei EMD Corporation

发明人： Ueno, Koichiro ,  Kuze, Naohiro ,  Moriyasu, Yoshitaka ,  Nagase, Kazuhiro

IPC分类号： H01L31/0304 ,  H01L31/0203 ,  H01L27/144

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  G01J1/02 ,  G01J1/0204 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/04 ,  G01J5/045 ,  G01J5/20 ,  G01J2001/0276 ,  H01L31/1035 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

公开(公告)号：EP2023398B1

公开(公告)日：2014-10-22

申请号：EP08019935.9

申请日：2004-09-09

申请人： Asahi Kasei EMD Corporation

发明人： Ueno, Koichiro ,  Kuze, Naohiro ,  Moriyasu, Yoshitaka ,  Nagase, Kazuhiro

IPC分类号： H01L31/0304 ,  H01L31/0203 ,  H01L27/144

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  G01J1/02 ,  G01J1/0204 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/04 ,  G01J5/045 ,  G01J5/20 ,  G01J2001/0276 ,  H01L31/1035 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

公开(公告)号：EP2023398A2

公开(公告)日：2009-02-11

申请号：EP08019935.9

申请日：2004-09-09

申请人： Asahi Kasei EMD Corporation

发明人： Ueno, Koichiro ,  Kuze, Naohiro ,  Moriyasu, Yoshitaka ,  Nagase, Kazuhiro

IPC分类号： H01L31/0352

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  G01J1/02 ,  G01J1/0204 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/04 ,  G01J5/045 ,  G01J5/20 ,  G01J2001/0276 ,  H01L31/1035 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

摘要翻译： 提供一种非常小且不易受电磁噪声和热波动影响的红外线传感器IC和红外线传感器及其制造方法。 传感器（2）使用具有小的器件电阻和大的电子迁移率的化合物半导体，然后，化合物半导体传感器（2）和处理化合物输出的电信号的集成电路（3） 半导体传感器（2）并执行操作，使用混合形式布置在单个封装中。 以这种方式，可以通过不是常规产生的微型和简单的包装来提供可以在室温下操作的红外线传感器IC。

公开(公告)号：EP2023398B9

公开(公告)日：2015-02-18

申请号：EP08019935.9

申请日：2004-09-09

申请人： Asahi Kasei EMD Corporation

发明人： Ueno, Koichiro ,  Kuze, Naohiro ,  Moriyasu, Yoshitaka ,  Nagase, Kazuhiro

IPC分类号： H01L31/0304 ,  H01L31/0203 ,  H01L27/144

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  G01J1/02 ,  G01J1/0204 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/04 ,  G01J5/045 ,  G01J5/20 ,  G01J2001/0276 ,  H01L31/1035 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.