公开(公告)号：EP3034655A1

公开(公告)日：2016-06-22

申请号：EP14199374.1

申请日：2014-12-19

申请人： Atotech Deutschland GmbH

发明人： Adolf, James ,  Jagannathan, Rangarajan ,  Suzuki, Hidenao ,  van Eisden, Jobert

IPC分类号： C25D7/12 ,  C25D3/38 ,  C25D5/02 ,  C25D5/48 ,  C23C18/16 ,  C23C18/40 ,  H01L21/288

CPC分类号： C23C18/1653 ,  C23C18/40 ,  C23C18/405 ,  C25D3/38 ,  C25D5/02 ,  C25D5/48 ,  C25D7/123 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76898

摘要： The present invention concerns a method for electrodepositing copper into a trench pattern in a structure including the following steps: forming a patterned metal hard mask layer over the dielectric substrate layer; patterning the dielectric layer by using an etch through the patterned metal-based hardmask optionally, forming a barrier and / or liner layer over the surface of the patterned dielectric substrate layer and the hard mask layer; forming over the barrier layer and the hard mask layer a basic metal seed layer by a wet chemical plating method to provide sufficient conductance for subsequent electrolytic deposition of copper; and immersing the dielectric substrate into an electrolytic copper plating bath in an electrolytic copper plating system to electrodeposit copper into the patterned dielectric substrate layer. The hard mask only needs to be removed after copper deposition.

摘要翻译： 本发明涉及一种将铜电沉积成沟槽图案的方法，包括以下步骤：在电介质基底层上形成图案化的金属硬掩模层; 通过使用通过图案化的金属基硬掩模的蚀刻来对介电层进行图案化，任选地，在图案化电介质基底层和硬掩模层的表面上形成阻挡层和/或衬层; 通过湿化学镀方法在阻挡层和硬掩模层上形成碱金属种子层，以提供足够的电导以便随后的铜的电沉积; 将电介质基板浸渍在电解镀铜系统的电解镀铜浴中，将铜电沉积到图案化电介质基板层中。 铜掩模只需要去除硬掩模。