摘要:
The invention relates to silanes containing phenothiazine-S-oxide or phenothiazine-S,S-dioxide groups, organic light-emitting diodes containing said silanes, a light-emitting layer containing at least one of said silanes and at least one triplet emitter. The invention also relates to a method for producing the silanes according to the invention, and to the use of said silanes in organic light-emitting diodes, preferably as matrix materials and/or blocker materials for triplet emitters.
摘要:
The invention relates to silanes containing phenothiazine-S-oxide or phenothiazine-S,S-dioxide groups, organic light-emitting diodes containing said silanes, a light-emitting layer containing at least one of said silanes and at least one triplet emitter. The invention also relates to a method for producing the silanes according to the invention, and to the use of said silanes in organic light-emitting diodes, preferably as matrix materials and/or blocker materials for triplet emitters.