公开(公告)号：EP3208851A4

公开(公告)日：2018-06-13

申请号：EP15762463

申请日：2015-03-16

Applicant: BOE TECHNOLOGY GROUP CO LTD ,  BEIJING BOE OPTOELECTRONICS TECH CO LTD

Inventor： ZHANG YING ,  LI XIN ,  ZHU HONG ,  YU HONGJUN

IPC: H01L29/786 ,  H01L21/336 ,  H01L29/66

CPC classification number: H01L27/124 ,  H01L27/12 ,  H01L29/06 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78663 ,  H01L29/78669 ,  H01L29/78696

Abstract: The present invention discloses a thin-film transistor and a fabricating method thereof, an array substrate and a display apparatus. An active layer in the thin-film transistor comprises a first active layer and a second active layer which are stacked; wherein, an orthographic projection of the first active layer on the substrate covers orthographic projections of the source electrode, the drain electrode as well as a gap located between the source electrode and the drain electrode on the substrate, and covers an orthographic projection of the gate electrode on the substrate; the second active layer is located at the gap between the source electrode and the drain electrode, and an orthographic projection of the second active layer on the substrate is located in a region where the orthographic projection of the gate electrode on the substrate is located. Under a backlight illumination condition, because the region where the second active layer of the thin-film transistor is located is shielded by the gate electrode, only a region, which is not shielded by the gate electrode, in the first active layer may generate photo-induced carriers. Consequently, there are less photo-induced carriers generated by such a structure, the increase of an off-state current is effectively inhibited, and thus an on-state current to off-state current ratio is increased, leading to an improved luminescence property of the thin-film transistor, and an enhanced image display quality of a display device.

公开(公告)号：EP3217217A4

公开(公告)日：2018-05-30

申请号：EP15848157

申请日：2015-11-05

Applicant: BOE TECHNOLOGY GROUP CO LTD ,  BEIJING BOE OPTOELECTRONICS TECH CO LTD

Inventor： WANG ZHENWEI ,  FAN YUGUANG ,  FANG YEZHOU ,  ZHU HONG ,  YU HONGJUN

IPC: G02F1/1343 ,  G02F1/1337

CPC classification number: G02F1/134363 ,  G02F1/133707 ,  G02F1/134309 ,  G02F1/134327 ,  G02F1/13439 ,  G02F2001/134345 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/124

Abstract: An array substrate, a display device and a method for manufacturing an array substrate are provided. The array substrate includes: two first conductive connection strips arranged opposite to each other; and multiple electrode strips arranged between the two first conductive connection strips. The multiple electrode strips are electrically connected to each other via the two first conductive connection strips. Slits are formed between adjacent electrode strips. The multiple electrode strips include at least one electrode strip, of which one end is electrically connected to one of the two first conductive connection strips and another end is spaced at a distance from the other of the two first conductive connection strips to form an opening. The opening is communicated with two adjacent slits.