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公开(公告)号：EP3229116A1
公开(公告)日：2017-10-11
申请号：EP15778597.3
申请日：2015-05-18
发明人： ZHANG, Lei , HU, Ming , ZHANG, Ming , XIE, Taofeng , WU, Lingyan , LIU, Yang , FANG, Zhixiang
IPC分类号： G06F3/044
CPC分类号： G06F3/044 , G06F3/0412 , G06F2203/04112
摘要： The present disclosure provides a touch panel and a display device. The touch panel includes a glass substrate and a conductive film arranged on the glass substrate. The conductive film includes a base material and a conductive layer arranged on the base material. The conductive layer includes first conductive patterns and second conductive patterns, each of which includes a plurality of meshes formed by conductive wires crossing each other. The first conductive patterns are each of an X-shaped structure and arranged in an array form, and the second conductive patterns are each formed at a region surrounding by the adjacent first conductive patterns, arranged adjacent to and insulated from the first conductive pattern, and arranged in an array form.
摘要翻译： 本公开提供了一种触摸面板和一种显示装置。 触摸面板包括玻璃基板和布置在玻璃基板上的导电膜。 导电膜包括基材和布置在基材上的导电层。 导电层包括第一导电图案和第二导电图案，每个第一导电图案和第二导电图案包括由彼此交叉的导电线形成的多个网格。 第一导电图案分别为X形结构并且以阵列形式布置，并且第二导电图案各自形成在由相邻的第一导电图案围绕的区域中，布置为与第一导电图案相邻且绝缘，并且 以阵列形式排列。
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公开(公告)号：EP3229116B1
公开(公告)日：2020-03-25
申请号：EP15778597.3
申请日：2015-05-18
发明人： ZHANG, Lei , HU, Ming , ZHANG, Ming , XIE, Taofeng , WU, Lingyan , LIU, Yang , FANG, Zhixiang
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3.发明公开
公开(公告)号：EP3510478A1
公开(公告)日：2019-07-17
申请号：EP17755047.2
申请日：2017-03-15
发明人： ZHANG, Lei , XIE, Taofeng , WU, Lingyan , LIU, Yang
IPC分类号： G06F3/041
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4.发明公开
公开(公告)号：EP4186960A1
公开(公告)日：2023-05-31
申请号：EP20966609.8
申请日：2020-12-25
发明人： ZHONG, Haizheng , LONG, Zhiwei , YANG, Gaoling , GU, Kai , LIU, Yang , CHEN, Zhuo
摘要： A method for preparing a ZnSe quantum dot, a ZnSe quantum dot, a ZnSe structure and a display device are provided. The method includes: preparing a first zinc precursor solution, a second zinc precursor solution, a first selenium precursor solution, and a second selenium precursor solution with a lower reaction activity than the first selenium precursor solution; adding the first selenium precursor solution to the second zinc precursor solution to form an intermediate of the ZnSe quantum dot; performing the following operation at least once to form the ZnSe quantum dot: sequentially adding the first zinc precursor solution and the second selenium precursor solution to the intermediate of the ZnSe quantum dot and making the first zinc precursor solution, the second selenium precursor solution, and the intermediate of the ZnSe quantum dot react.
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