公开(公告)号：EP3627560A1

公开(公告)日：2020-03-25

申请号：EP17896318.7

申请日：2017-12-14

申请人： BOE Technology Group Co., Ltd.

发明人： CHEN, Jiangbo ,  SONG, Young-suk ,  LI, Wei ,  YAN, Liangchen

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L21/336

摘要： Embodiments of the present disclosure relate to a thin film transistor, a method for manufacturing the same, a display panel, and a display device. The thin film transistor includes: a substrate; an active layer located on the substrate; and a light shielding layer, a first dielectric layer, and a second dielectric layer located between the substrate and the active layer, wherein the first dielectric layer is located between the second dielectric layer and the substrate, and wherein a refractive index of the first dielectric layer is greater than a refractive index of the second dielectric layer.