摘要:
The present disclosure discloses an AMOLED driving and compensating circuit and method, and AMOLED display device. The driving and compensating circuit comprising: several driving circuits set inside several pixel regions used for driving several AMOLEDs; an external compensating circuit set outside the pixel regions used for eliminating an effect of threshold voltage of a driving thin film transistors in the several driving circuits set inside the several pixel regions on driving currents passing through the driving thin film transistors. The driving and compensating method comprising: storing threshold voltage of the driving thin film transistors of the several driving circuits set inside the several pixel regions; storing grayscale voltage of each of the several driving circuits set inside the several pixel regions; gate voltage of the driving thin film transistor of each of the several driving circuits set inside the several pixel regions jumping to a sum of the threshold voltage and the grayscale voltage of the driving circuit. The display device comprises the AMOLED driving and compensating circuit.
摘要:
A circuit board assembly (100), comprising a first circuit board (1) and at least one second circuit board (2). The first circuit board (1) comprises at least one first binding assembly (11), and the first binding assembly (11) comprises a plurality of first conductive blocks (111) sequentially arranged at intervals in a first direction. The at least one second circuit board (2) comprises at least one second binding assembly (21), and the second binding assembly (21) comprises a plurality of second conductive blocks (211) sequentially arranged at intervals; the plurality of second conductive blocks (211) in one second binding assembly (21) are bound and connected to the plurality of first conductive blocks (111) in one first binding assembly (11) in one-to-one correspondence. The expansion rate of the first circuit board (1) is less than the expansion rate of the second circuit board (2); the second conductive blocks (211) in the second binding assembly (21) overlap the first conductive blocks (111) bound and connected thereto, and the change rate of the overlapping state of the second binding assembly (21) in the first direction is less than 0.102%.