公开(公告)号：EP0811665A3

公开(公告)日：1998-10-21

申请号：EP97303133

申请日：1997-05-08

申请人： CABOT CORP

发明人： SCHERBER DEBRA L ,  KAUFMAN VLASTA BRUSIC ,  KISTLER RODNEY C ,  MUELLER BRIAN L ,  STREINZ CHRISTOPHER C

IPC分类号： B24C1/08 ,  B24C11/00 ,  C09G1/02 ,  C23F3/00 ,  H01L21/321

CPC分类号： C23F3/00 ,  C09G1/02 ,  H01L21/3212

摘要： A polishing slurry for chemically mechanically polishing metal layers and films during the various stages of multilevel interconnect fabrication associated with integrated circuit manufacturing. The slurry includes an aqueous medium, an abrasive, an oxidizing agent, and an organic acid. The polishing slurry has been found to significantly lower or inhibit the silicon dioxide polishing rate, thus yielding enhanced selectivity. In addition, the polishing slurry is useful in providing effective polishing to metal layers at desired polishing rates while minimizing surface imperfections and defects.
Also disclosed is a method for producing coplanar metal/insulator films on a substrate utilizing the slurry of the present invention and chemical mechanical polishing technique relating thereto.

摘要翻译： 用于在与集成电路制造相关的多级互连制造的各个阶段期间化学机械抛光金属层和膜的抛光浆料。 浆料包括水性介质，研磨剂，氧化剂和有机酸。 已经发现抛光浆液显着降低或抑制二氧化硅抛光速率，从而产生增强的选择性。 此外，抛光浆料可用于以期望的抛光速率为金属层提供有效的抛光，同时最小化表面缺陷和缺陷。 还公开了利用本发明的浆料和与其相关的化学机械抛光技术在基材上生产共面金属/绝缘体膜的方法。

公开(公告)号：EP0811666A3

公开(公告)日：1998-10-21

申请号：EP97303836

申请日：1997-06-04

申请人： CABOT CORP

发明人： STREINZ CHRISTOPHER C ,  MUELLER BRIAN L ,  LUCARELLI MICHAEL A ,  WALTERS MAX H

IPC分类号： C09G1/02 ,  C09K3/14 ,  C09K13/04 ,  H01L21/304 ,  H01L21/321 ,  H01L21/3213

CPC分类号： C09G1/02 ,  H01L21/3213

摘要： A chemical mechanical polishing slurry having a pH in the range 1.5 to 3.0 comprising an oxidizing agent such as ferric nitrate, a fluoride containing additive such as hydrofluoric acid in an amount ranging from 0.01 to 0.3 weight percent and an abrasive consisting of fine metal particles, such as fumed alumina and a method for using the fluoride containing additive chemical mechanical polishing slurry to remove tungsten and titanium from substrates.