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公开(公告)号:EP1606856A2
公开(公告)日:2005-12-21
申请号:EP04722890.3
申请日:2004-03-24
CPC分类号: H01S1/02 , G01N21/3586 , H01L33/0004 , H01Q3/2676 , H01Q19/10
摘要: The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter (202) comprising a semiconductor material (12) ; a pair of electrodes (204a, b) on a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor so as to generate terahertz readiation (210) in said semiconductor by the photoconductive creation of very short (femtosecond) electromagnetic pulses; and a radiation collector (212) to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.