公开(公告)号：EP1485956A4

公开(公告)日：2009-08-12

申请号：EP03703354

申请日：2003-02-21

申请人： CANON KK

发明人： MIZUTANI MASAKI ,  ISHIHARA SHUNICHI ,  NAKAGAWA KATSUMI ,  SATO HIROSHI ,  YOSHINO TAKEHITO ,  NISHIDA SHOJI ,  UKIYO NORITAKA ,  IWANE MASAAKI ,  IWASAKI YUKIKO

IPC分类号： C01B33/02 ,  C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L21/208 ,  H01L31/18 ,  H01L31/04

CPC分类号： C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.