PROCESS OF USING MICROWAVE DEPOSITION OF METAL OXIDE ONTO AN ORGANIC SUBSTRATE
    1.
    发明公开
    PROCESS OF USING MICROWAVE DEPOSITION OF METAL OXIDE ONTO AN ORGANIC SUBSTRATE 审中-公开
    使用微波将金属氧化物沉积在有机基质上的方法

    公开(公告)号:EP1833922A1

    公开(公告)日:2007-09-19

    申请号:EP05819168.5

    申请日:2005-12-05

    IPC分类号: C09C1/00

    摘要: The present invention is directed to a process for the preparation of a plane-parallel structure (a platelet-shaped body, or flake), comprising at least one dielectric layer consisting of one or more oxides of a metal selected from groups 3 to 15 of the periodic table, which comprises the steps of: (a) applying a thin film of the dielectric material on a flexible belt, by passing the belt through an aqueous solution of a fluorine scavenger and one or more fluorine containing metal complexes which are the precursors of the desired metal oxide coating; and subjecting said solution to microwave radiation to deposit the metal oxide onto said flexible belt, wherein step (a) can optionally be repeated using different fluorine containing metal complexes to produce one or more metal oxide layers or a gradient of concentration of 2 different metal oxides across the thickness; (b) separating the resulting layer from the flexible belt as plane-parallel structures.

    摘要翻译: 本发明涉及制备平面平行结构(小片状体或薄片)的方法,该方法包括至少一个介电层,该介电层由一种或多种选自3-15族的金属的氧化物组成 该方法包括以下步骤:(a)通过使带穿过氟清除剂的水溶液和一种或多种作为前体的含氟金属配合物,在柔性带上施加介电材料的薄膜 的期望的金属氧化物涂层; 并且使所述溶液经受微波辐射以将金属氧化物沉积到所述柔性带上,其中步骤(a)可以可选地使用不同的含氟金属络合物重复以产生一个或多个金属氧化物层或浓度梯度为2种不同的金属氧化物 穿过厚度; (b)将所得层从柔性带上分离成平面平行结构。