公开(公告)号：EP2333834A2

公开(公告)日：2011-06-15

申请号：EP10190863.0

申请日：2010-11-11

申请人： Canon Kabushiki Kaisha

发明人： Kudo, Masanori ,  Hayashi, Yoshiyuki ,  Saito, Kazuhiro ,  Kato, Taro ,  Fukumoto, Yoshihiko

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14621 ,  H01L27/1463

摘要： A photoelectric conversion device includes a plurality of photoelectric conversion regions (102, 105), an interlayer insulating film (108, 109) arranged on the plurality of photoelectric conversion regions (102, 105), a protective insulating film (110) that is arranged in contact with the interlayer insulating film (108, 109) and has a refractive index different from that of the interlayer insulating film (108, 109), recesses (111) arranged in a light-receiving surface of each of the plurality of photoelectric conversion regions (102, 105), and embedded regions (112) embedded in the recesses (111). When a wavelength of incident light to each of the plurality of photoelectric conversion regions (102, 105) is denoted by λ and a refractive index of the embedded regions (112) is denoted by n, a depth d of the recesses (111) is represented by an expression d ≥ λ/4n.

摘要翻译： 光电转换装置包括多个光电转换区域（102,105），布置在多个光电转换区域（102,105）上的层间绝缘膜（108,109），布置在保护绝缘膜 与层间绝缘膜（108,109）接触并且具有与层间绝缘膜（108,109）的折射率不同的折射率，设置在多个光电转换中的每一个的光接收表面中的凹部（111） 区域（102,105）和嵌入凹槽（111）中的嵌入区域（112）。 当将多个光电转换区域（102,105）中的每一个的入射光的波长表示为»，并且嵌入区域（112）的折射率由n表示时，凹部（111）的深度d 由表达式d‰¥»/ 4n表示。

公开(公告)号：EP2333834A3

公开(公告)日：2012-06-13

申请号：EP10190863.0

申请日：2010-11-11

申请人： Canon Kabushiki Kaisha

发明人： Kudo, Masanori ,  Hayashi, Yoshiyuki ,  Saito, Kazuhiro ,  Kato, Taro ,  Fukumoto, Yoshihiko

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14621 ,  H01L27/1463

摘要： A photoelectric conversion device includes a plurality of photoelectric conversion regions (102, 105), an interlayer insulating film (108, 109) arranged on the plurality of photoelectric conversion regions (102, 105), a protective insulating film (110) that is arranged in contact with the interlayer insulating film (108, 109) and has a refractive index different from that of the interlayer insulating film (108, 109), recesses (111) arranged in a light-receiving surface of each of the plurality of photoelectric conversion regions (102, 105), and embedded regions (112) embedded in the recesses (111). When a wavelength of incident light to each of the plurality of photoelectric conversion regions (102, 105) is denoted by λ and a refractive index of the embedded regions (112) is denoted by n, a depth d of the recesses (111) is represented by an expression d ≥ λ/4n.

摘要翻译： 一种光电转换装置，包括：多个光电转换区（102,105）;布置在所述多个光电转换区（102,105）上的层间绝缘膜（108,109）;保护绝缘膜（110） 与所述层间绝缘膜（108,109）接触且具有与所述层间绝缘膜（108,109）不同的折射率的凹部（111），所述凹部（111）布置在所述多个光电转换中的每一个的光接收表面中 区域（102,105）以及嵌入凹槽（111）中的嵌入区域（112）。 当到多个光电转换区域（102,105）中的每一个的入射光的波长由λ表示并且嵌入区域（112）的折射率由n表示时，凹陷（111）的深度d是 由表达式d≥λ/ 4n表示。