Lithography system
    1.
    发明公开
    Lithography system 审中-公开
    光刻系统

    公开(公告)号:EP1777728A1

    公开(公告)日:2007-04-25

    申请号:EP05022915.2

    申请日:2005-10-20

    摘要: A charged particle lithography system comprises a particle source for generating a beam of charged particles, a pattern defining structure and a particle-optical projection system for imaging the pattern defined by the pattern defining structure onto a substrate. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411'), and an inner pole piece (412) having a lowermost end (412') disposed closest to the radial inner end of the outer pole piece, a gap being formed those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (452) disposed in a region of the gap; and a controller (C) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of the substrate from a portion of the first magnetic lens disposed closest to the substrate.