公开(公告)号：EP4390933A1

公开(公告)日：2024-06-26

申请号：EP22315346.1

申请日：2022-12-21

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： Sabbione, Chiara ,  Navarro, Gabriele ,  Tessaire, Magali ,  Frei, Michel Ranjit ,  Nistor, Lavinia-Elena

IPC分类号： G11C13/00 ,  H10N70/00 ,  H10N70/20

CPC分类号： H10N70/8828 ,  H10N70/231 ,  H10N70/041 ,  H10N70/826 ,  G11C13/0004 ,  H10N70/026 ,  H10N70/235

摘要： The invention relates to a material stack, a microelectronic device that integrates such stack and a method for obtaining such stack.
A non-limitative application of the invention relates to Phase-Change Memory device. The material stack (10) for microelectronic device (1) comprises:
a. A substrate (11),
b. A first undoped crystalline layer (12) on the substrate, said undoped crystalline layer having a thickness superior to 4 nm, and
c. A Si-doped crystalline chalcogenide layer (13) on the undoped crystalline layer, said Si-doped crystalline chalcogenide layer being doped with less than 20 at.%, and preferably less than 12 at.%, of Si.
The provided material stack shows a satisfying stability contributing to retard the stack possible reorganization (i.e. intermixing) that could happen during the manufacturing of the material stack and during the subsequent manufacturing of said microelectronic device.