公开(公告)号：EP0986826B1

公开(公告)日：2010-12-29

申请号：EP99911878.9

申请日：1999-04-06

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： MALEVILLE, Christophe ,  BARGE, Thierry ,  ASPAR, Bernard ,  MORICEAU, Hubert ,  AUBERTON-HERVE, André-Jacques

IPC分类号： H01L21/762

CPC分类号： H01L21/3221 ,  H01L21/76254

摘要： The invention concerns a method for treating a substrate comprising a semi-conducting layer (4) on at least one of its surfaces. Said method comprises a step for annealing the substrate and a step for forming an oxide layer (6) at the semi-conducting layer (4) surface, carried out before the end of the annealing step, protecting the remainder of the semi-conducting layer (4).