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1.发明授权
公开(公告)号：EP2721650B1
公开(公告)日：2015-07-01
申请号：EP12726462.0
申请日：2012-04-26
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/068 , H01L21/225 , H01L21/268
CPC分类号： H01L31/1868 , H01L21/2254 , H01L21/268 , H01L31/02168 , H01L31/068 , H01L31/1804 , H01L31/1864 , Y02E10/52 , Y02E10/547 , Y02P70/521
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公开(公告)号：EP2801118A1
公开(公告)日：2014-11-12
申请号：EP12819097.2
申请日：2012-12-19
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1864 , H01L31/0288 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： This process for manufacturing a photovoltaic cell consists in: producing a semiconductor substrate (10) comprising first and second opposite sides (12, 16); producing, in the first side (12) of the substrate (10), a first semiconductor zone (14) doped by implanting first dopant elements into the thickness of the substrate and by thermally activating the first implanted dopant elements at a first activation temperature; and producing, on the second side (16) of the substrate (10), a second semiconductor zone (18) by implanting second dopant elements into the thickness of the substrate and by thermally activating the second implanted dopant elements at a second activation temperature that is below the first activation temperature. The substrate is more than 50 microns in thickness and at least the thermal activation of the first dopant elements is carried out by laser irradiation, the irradiation parameters being chosen so that the radiation is absorbed at most in a depth of the first micron of the substrate.
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公开(公告)号：EP2801118B1
公开(公告)日：2015-09-16
申请号：EP12819097.2
申请日：2012-12-19
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1864 , H01L31/0288 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
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4.发明公开
公开(公告)号：EP2721650A1
公开(公告)日：2014-04-23
申请号：EP12726462.0
申请日：2012-04-26
IPC分类号： H01L31/18 , H01L31/0216 , H01L21/225 , H01L21/268
CPC分类号： H01L31/1868 , H01L21/2254 , H01L21/268 , H01L31/02168 , H01L31/068 , H01L31/1804 , H01L31/1864 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： The process according to the invention comprises the following steps: depositing an antireflection layer (7) containing n-type dopants on a p-type or n-type silicon substrate (1), said deposition being carried out in the presence of a chemical compound that accelerates diffusion of the n-type dopant atoms into said substrate (1); overdoping at least one zone of the substrate (1), so as to produce at least one overdoped n
++ emitter (6), by diffusing, in specific locations, the n-type dopants from at least one zone of the antireflection layer (7); depositing at least one n-type conductive material (3) on the at least one overdoped n
++ emitter (6) and at least one p-type conductive material (4) on the side of the substrate (1) opposite that comprising the antireflection layer (7); and producing n-type contacts (3) and p-type contacts (4) at the same time as an n
+ emitter (5) by way of an anneal able to make n-type dopants diffuse into the substrate from the antireflection layer (7).
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