摘要:
The present invention relates to a magnetic device (200) comprising a reference magnetic layer (201) with a fixed magnetisation direction either aligned with the plane of the layer (201) or perpendicular to the plane of the layer (201), a second magnetic storage layer (203), having a variable magnetisation direction, a nonmagnetic spacer (202) separating the reference layer (201) from the storage layer (203), and a third magnetic layer (205) for the electron spin polarisation with a magnetisation perpendicular to that of the layer (201) and out-of-plane of the layer (205) if the magnetisation direction of the reference layer (201) is in the plane of the layer (201) or in the plane of the layer (205) if the magnetisation direction of the reference layer (201) is perpendicular to the plane of the layer (201). The spin transfer coefficient between the reference layer (201) and the storage layer (203) is higher than the spin transfer coefficient between the spin polarisation layer (205) and the storage layer (203).