公开(公告)号：EP4412438A1

公开(公告)日：2024-08-07

申请号：EP23305137.4

申请日：2023-02-02

申请人： Commissariat à l'énergie atomique et aux énergies alternatives

发明人： NEMOUCHI, Fabrice ,  LEFLOCH, François ,  ZHANG, Shi-li ,  ZHANG, Zhen

IPC分类号： H10N60/01 ,  H10N60/10

CPC分类号： H10N60/0912 ,  H10N60/128

摘要： Method for producing a superconducting transistor (100), comprising:
- producing a dummy gate on a first part (124) of a semiconducting layer;
- producing superconducting electrodes such that the first part of the semiconducting layer comprises sides edges arranged against parts of the superconducting electrodes, and comprising a deposition of a superconducting material layer having first parts arranged against side edges of the dummy gate and second parts (140) forming parts of the superconducting electrodes;
- producing lateral spacers (144) next to the first parts of the superconducting material layer and on the second parts of the superconducting material layer;
- removing the dummy gate and the first parts of the superconducting material layer, creating a gate location arranged between the lateral spacers and above the first part of the semiconducting layer and above said parts of the superconducting electrodes;
- producing a gate (154, 156) in the gate location.