公开(公告)号：EP2109884A1

公开(公告)日：2009-10-21

申请号：EP08716770.6

申请日：2008-02-07

申请人： Commissariat à l'Energie Atomique ,  STMicroelectronics (Crolles 2) SAS

发明人： VINCENT, Benjamin ,  DAMLENCOURT, Jean-François ,  MORAND, Yves

IPC分类号： H01L21/762

CPC分类号： H01L21/7624 ,  H01L21/28518

摘要： The invention relates to a method for forming an on-insulator germanium layer from a SGOI substrate, that comprises the following steps: the deposition on said substrate of a layer of a metallic element M capable of selectively forming a silicide, said layer being in contact with a layer of a silicon-germanium alloy; the reaction between said alloy layer and said layer of the metallic element M, whereby a stack of M-germanium-insulator silicide layers is obtained. Application in the production o electronic devices such as MOSFET transistors.

公开(公告)号：EP2109884B1

公开(公告)日：2012-02-29

申请号：EP08716770.6

申请日：2008-02-07

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  STMicroelectronics (Crolles 2) SAS

发明人： VINCENT, Benjamin ,  DAMLENCOURT, Jean-François ,  MORAND, Yves

IPC分类号： H01L21/762

CPC分类号： H01L21/7624 ,  H01L21/28518

摘要： The invention relates to a method for forming an on-insulator germanium layer from a SGOI substrate, that comprises the following steps: the deposition on said substrate of a layer of a metallic element M capable of selectively forming a silicide, said layer being in contact with a layer of a silicon-germanium alloy; the reaction between said alloy layer and said layer of the metallic element M, whereby a stack of M-germanium-insulator silicide layers is obtained. Application in the production o electronic devices such as MOSFET transistors.