公开(公告)号：EP1218796A1

公开(公告)日：2002-07-03

申请号：EP00945368.9

申请日：2000-07-13

申请人： Corning Incorporated

发明人： DAVIS, Claude, L. ,  HRDINA, Kenneth, E. ,  SABIA, Robert

IPC分类号： G03C5/00

CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G02B17/06 ,  G03F1/24 ,  G03F1/60 ,  G03F7/702 ,  G03F7/70233 ,  G03F7/70283 ,  G03F7/70891 ,  G03F7/70958 ,  Y10S438/947 ,  Y10S438/974

摘要： The present invention relates to reflective masks and their use for reflecting extreme ultraviolet soft x-ray photons to enable the use of extreme ultraviolet soft x-ray radiation projection lithographic methods and systems for producing integrated circuits and forming patterns with extremely small feature dimensions. The projection lithographic method includes providing an illumination sub-system for producing and directing an extreme ultraviolet soft x-ray radiation μ from an extreme ultraviolet soft x-ray source; providing a mask sub-system illuminated by the extreme ultraviolet soft x-ray radiation μ produced by the illumination sub-system and providing the mask sub-system includes providing a patterned reflective mask for forming a projected mask pattern when illuminated by radiation μ. Providing the patterned reflective mask includes providing a Ti doped high purity SiO2 glass wafer with a patterned absorbing overlay overlaying the reflective multilayer coated Ti doped high purity SiO2 glass defect free wafer surface that has an Ra roughness ≤0.15 nm. The method includes providing a projection sub-system and a print media subject wafer which has a radiation sensitive wafer surface wherein the projection sub-system projects the projected mask pattern from the patterned reflective mask onto the radiation sensitive wafer surface.