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1.发明公开OPTICALLY TRIGGERED WIDE BANDGAP BIPOLAR POWER SWITCHING DEVICES AND CIRCUITS 有权光引发双极性切换功率元件与BIG BAND和距离CIRCUITS
公开(公告)号：EP1880470A1
公开(公告)日：2008-01-23
申请号：EP06759484.6
申请日：2006-05-10
申请人： Cree Inc.
IPC分类号： H03K17/79 , H01L27/144
CPC分类号： H01L29/66068 , H01L21/8213 , H01L27/0825 , H01L29/1608 , H01L31/028 , H01L31/0304 , H01L31/11 , H01L31/1113 , H01L31/167 , H03K17/615 , H03K17/79 , H03K17/7955 , Y10T307/773
摘要： An electronic circuit includes a primarly wide bandgap bipolar power switching device configured to supply a load current in response to a control signal applied to a control terminal thereof, and a driver device configured to generate the control signal. At least one of the primary switching device or the driver device may include an optically triggered switching device. A discrete wide bandgap semiconductor device includes a primary bipolar device stage configured to switch between a conducting state and a nonconducting state upon application of a control current, and a bipolar driver stage configured to generate the control current and to supply the control current to the primary bipolar device stage. At least one of the primary bipolar device stage and the bipolar driver stage may include an optically triggered wide bandgap switching device.
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2.发明授权OPTICALLY TRIGGERED WIDE BANDGAP BIPOLAR POWER SWITCHING DEVICES AND CIRCUITS 有权光引发双极性切换功率元件与BIG BAND和距离CIRCUITS
公开(公告)号：EP1880470B1
公开(公告)日：2010-06-02
申请号：EP06759484.6
申请日：2006-05-10
申请人： Cree Inc.
IPC分类号： H03K17/79 , H01L27/144
CPC分类号： H01L29/66068 , H01L21/8213 , H01L27/0825 , H01L29/1608 , H01L31/028 , H01L31/0304 , H01L31/11 , H01L31/1113 , H01L31/167 , H03K17/615 , H03K17/79 , H03K17/7955 , Y10T307/773
摘要： An electronic circuit includes a primarly wide bandgap bipolar power switching device configured to supply a load current in response to a control signal applied to a control terminal thereof, and a driver device configured to generate the control signal. At least one of the primary switching device or the driver device may include an optically triggered switching device. A discrete wide bandgap semiconductor device includes a primary bipolar device stage configured to switch between a conducting state and a nonconducting state upon application of a control current, and a bipolar driver stage configured to generate the control current and to supply the control current to the primary bipolar device stage. At least one of the primary bipolar device stage and the bipolar driver stage may include an optically triggered wide bandgap switching device.
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