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1.发明公开CHEMICAL-MECHANICAL POLISHING SLURRY COMPOSITION COMPRISING NONIONIZED HEAT-ACTIVATED NANOCATALYST, AND POLISHING METHOD USING SAME 审中-公开MUD组成化学机械清洗的，加入工会的热活化纳米催化剂和清洁的过程，
公开(公告)号：EP2439248A4
公开(公告)日：2012-12-26
申请号：EP10783537
申请日：2010-05-27
发明人： PARK JONG DAI , LIM JIN HYUK , CHOI JUNG MIN , KONG HYUN GOO , KIM JAE HYUN , PARK HYE JUNG
IPC分类号： H01L21/321 , C09G1/02
CPC分类号： H01L21/3212 , C09G1/02
摘要： Disclosed herein are a chemical mechanical polishing slurry composition for chemical mechanical planarization of metal layers, which comprises a non-ionized, heat-activated nano-catalyst, and a polishing method using the same. The polishing slurry composition comprises: a non-ionized, heat-activated nano-catalyst which releases electrons and holes by energy generated in a chemical mechanical polishing process; an abrasive; and an oxidizing agent. The non-ionized, heat-activated nano-catalyst and the abrasive are different from each other, and the non-ionized, heat-activated nano-catalyst is preferably a semiconductor material which releases electrons and holes at a temperature of 10 to 100 °C in an aqueous solution state, more preferably a transition metal silicide selected from the group consisting of CrSi, MnSi, CoSi, ferrosilicon (FeSi), mixtures thereof, and most preferably, a semiconductor material such as nano ferrosilicon. The content of the content of the non-ionized, heat-activated nano-catalyst is 0.00001 to 0.1 wt% based on the total weight of the slurry composition.
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