High purity metals, process and apparatus for producing them by enhanced purification
    2.
    发明公开
    High purity metals, process and apparatus for producing them by enhanced purification 有权
    通过改进的精炼高纯度,方法和装置及其生产金属

    公开(公告)号:EP1335030A1

    公开(公告)日:2003-08-13

    申请号:EP02007587.5

    申请日:2002-04-03

    摘要: In a purification apparatus comprising a vertical stack of a feed heating zone having the feed crucible 1, a condensation zone having a plurality of condensation vapor passage plates 5, a solidification zone having a solidification crucible 2 and an entrapment/solidification zone having a plurality of entrapment/solidification vapor passage plates 7, a feed metal, preferably with a purity of at least 3N, is charged into the feed crucible 1 in a vacuum atmosphere, preferably at no more than 13 Pa (10 -1 Torr), with the feed crucible 1 and the condensation vapor passage plates 5 being heated at controlled temperatures to generate the vapor of the metal in the feed heating zone; part of the metal vapor is condensed to form a molten condensate which is returned into the feed crucible 1, thereby ; the process solidifying the high-purity metal in the solidification zone; the solidified metal has a purity of at least 6N and contains Cl, F and S in a respective amount of no more than 0.1 ppm with a total impurity content of no more than 1 ppm.

    摘要翻译: 在一个净化装置,其包括进料加热区的垂直堆叠具有进料的坩埚1,具有缩合蒸气通道板5的多个冷凝区域,具有凝固坩埚2和截留/凝固区具有多个A凝固区 截留/凝固蒸气路板7,一个进料金属,优选地具有至少3N纯度,装入在真空气氛中进料的坩埚1,优选在不超过13帕(10 <-1>乇)中,用 进给坩埚1和冷凝蒸汽通道板5在控制的温度下加热,以产生在供给加热区中的金属的蒸气; 金属蒸气的一部分被冷凝以形成熔融的所有冷凝物被返回到进料的坩埚1,由此; 过程凝固在凝固区中的高纯度金属; 凝固的金属具有至少6N的纯度,并含有为Cl,F和S中不超过0.1ppm的的具有不超过1ppm的总杂质含量respectivement量。

    Vacuum distillation method and apparatus for enhanced purification of high-purity metals like indium
    4.
    发明公开
    Vacuum distillation method and apparatus for enhanced purification of high-purity metals like indium 有权
    对于纯金属的增强纯化如通过真空蒸馏铟的方法和装置

    公开(公告)号:EP1335032A1

    公开(公告)日:2003-08-13

    申请号:EP02002879.1

    申请日:2002-02-08

    摘要: A 99.99% pure indium feed is charged into crucible 8 and heated to 1250 °C by upper heater 6 in a vacuum atmosphere at 1 x 10 -4 Torr, whereupon indium evaporates, condenses on the inner surfaces of inner tube 3 and drips to be recovered into liquid reservoir 9 in the lower part of tubular member 11 whereas impurity elements having lower vapor pressure than indium stay within crucible 8. The recovered indium mass in liquid reservoir 9 is heated to 1100 °C by lower heater 7 and the resulting vapors of impurity elements having higher vapor pressure than indium pass through diffuser plates 12 in the upper part of tubular member 11 to be discharged from the system whereas the indium vapor recondenses upon contact with diffuser plates 12 and returns to liquid reservoir 9, yielding 99.9999% pure indium while preventing the loss of indium.

    摘要翻译: 99.99%的纯铟原料装入坩埚8,并加热到以1×10 <-4>乇的真空气氛中1250℃由上加热器6,其中一旦铟蒸发,冷凝内管3和滴落的内表面上 在管状构件11,而具有比坩埚8.内铟停留低的蒸气压的杂质元素在液体储存器9回收铟质量的下部被回收到储液器9由下部加热器7,将所得被加热到1100℃ 在管状构件11的上部分具有较高的蒸气压比铟直通漫射板12的杂质元素的蒸汽从系统鉴于在与漫板12,并返回到液体储存器9相接触的铟蒸气重新凝固被排出,产生99.9999% 纯铟同时防止铟的损失。