公开(公告)号：EP1994558A1

公开(公告)日：2008-11-26

申请号：EP07797101.8

申请日：2007-01-30

申请人： ENTHONE, INCORPORATED

发明人： PANECCASIO, Vincent, M., Jr. ,  LIN, Xuan ,  FIGURA, Paul ,  HURTUBISE, Richard ,  WITT, Christian

IPC分类号： H01L21/44

CPC分类号： H01L21/2885 ,  C25D3/38 ,  C25D7/123 ,  H01L21/76877

摘要： An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is greater than Cu deposition on the side walls.

摘要翻译： 一种电解电镀方法和组合物，用于将Cu电解电镀到具有亚微米尺寸互连特征的半导体集成电路衬底上。 该组合物包含Cu离子源和包含聚醚基团的抑制剂化合物。 该方法包括在超填充速度下的快速自下而上沉积，通过该超填充速度，从特征的底部到特征的顶部开口的垂直方向上的Cu沉积大于侧壁上的Cu沉积。