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    REVERSELY-INSTALLED PHOTONIC CRYSTAL LED CHIP AND METHOD FOR MANUFACTURING SAME
    1.
    发明公开
    REVERSELY-INSTALLED PHOTONIC CRYSTAL LED CHIP AND METHOD FOR MANUFACTURING SAME 有权
    反向安装的光子晶体LED芯片及其制造方法

    公开(公告)号：EP2940741A1

    公开(公告)日：2015-11-04

    申请号：EP13868123.4

    申请日：2013-12-26

    申请人： Enraytek Optoelectronics Co., Ltd.

    发明人： WU, Leke

    IPC分类号： H01L33/20

    CPC分类号： H01L33/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/64 ,  H01L2933/0033 ,  H01L2933/0075 ,  H01L2933/0083

    摘要： A method of fabricating a flip-chip photonic-crystal light-emitting diode (LED) is disclosed. The method includes the steps of: providing an initial substrate including an epitaxial-growth surface and a light-output surface; performing a nanoimprint process on the epitaxial-growth surface of the initial substrate to form a nano-level patterned substrate; forming a flip-chip LED structure on the epitaxial-growth surface of the nano-level patterned substrate; and performing a nanoimprint process on the light-output surface of the nano-level patterned substrate to form the flip-chip photonic-crystal LED. The formation of the photonic-crystal structure on the light-output surface results in enhanced LED light extraction and emission efficiency.

    摘要翻译： 公开了一种制造倒装芯片光子晶体发光二极管（LED）的方法。 该方法包括以下步骤：提供包括外延生长表面和光输出表面的初始衬底; 在初始衬底的外延生长表面上执行纳米压印工艺以形成纳米级图案化衬底; 在纳米级图形化衬底的外延生长表面上形成倒装芯片LED结构; 以及在纳米级图案化基板的光输出表面上执行纳米压印工艺以形成倒装芯片光子晶体LED。 光输出表面上的光子晶体结构的形成导致LED光提取和发射效率的增强。