摘要:
Ti, Zr Hf and La precursors for use in MOCVD techniques have a ligand of the general formula OCR (R )CH2X, wherein R is H or an alkyl group, R is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group.
摘要:
Rare earth metal precursors, for use in MOCVD techniques have a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2,wherein R is an alkyl group or a substituted alkyl group. Methods of making such precursors and methods of depositing metal oxide layers from such precursors are also described.
摘要:
Ti, Zr Hf and La precursors for use in MOCVD techniques have a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR¿2?, wherein R is an alkyl group or a substituted alkyl group.