公开(公告)号：EP4227446A1

公开(公告)日：2023-08-16

申请号：EP21879697.7

申请日：2021-06-30

申请人： Epicrew Corporation

发明人： OKABE, Akira

IPC分类号： C30B25/10 ,  H01L21/205 ,  H01L21/683 ,  C23C16/44

摘要： In a vapor phase growth system in which a preheating ring is provided around a susceptor, the flow rate of source gas can be adjusted by changing the position of the susceptor, and the effect on the film thickness variation of a semiconductor single-crystal layer due to the changes of the position of the susceptor is caused to be less likely to occur. The susceptor is raised/lowered by a susceptor position changing mechanism, and the height position of holding the susceptor in a reaction vessel body can be changed. Moreover, a preheating ring position changing mechanism is provided that changes the height position of holding the preheating ring in the reaction vessel body on the basis of raising/lowering of the preheating ring in accordance with the changes of the height position of holding the susceptor. The misalignment between the preheating ring and the substrate in the height direction may be reduced even if the susceptor holding position is changed, advantageously reducing the effects of insufficient heat equalization effect on the outer circumference of the substrate due to the preheating ring and the effect of turbulence in the source gas flow due to a step between the substrate main surface and the preheating ring, and thereby reducing the effects on the thickness variation of the resulting semiconductor single-crystal layer.

公开(公告)号：EP4006956A1

公开(公告)日：2022-06-01

申请号：EP19938181.5

申请日：2019-07-25

申请人： Epicrew Corporation

发明人： OKABE, Akira ,  TAKENAGA, Yukio

IPC分类号： H01L21/205

摘要： A process chamber of an epitaxial growth apparatus is directed to a process chamber configured to perform reaction processing on a semiconductor substrate, which includes a susceptor supported and disposed in the process chamber by a shaft member supporting only a central portion in a radial direction and extending in an upward/downward direction, and on which the semiconductor substrate is placed, a finger plate wafer lift disposed below the susceptor and configured to be movable in an axial direction of the shaft member, and a lift pin configured to displace the semiconductor substrate upward from an upper surface of the susceptor according to approach of the finger plate wafer lift to the susceptor, and a through-hole through which the lift pin passes is formed in the susceptor.

公开(公告)号：EP4219804A1

公开(公告)日：2023-08-02

申请号：EP21871919.3

申请日：2021-06-10

申请人： Epicrew Corporation

发明人： OKABE, Akira

IPC分类号： C30B25/12 ,  H01L21/205 ,  C30B29/06 ,  C23C16/24 ,  C23C16/455

摘要： A vapor phase growth system is capable of adequately ensuring space for moving a substrate transfer member when loading/unloading a substrate to and from a susceptor even if a configuration is employed in which the space between the bottom surface of the ceiling plate of a reaction vessel and a set of the susceptor and a preheating ring is narrowed. A process chamber includes a susceptor lifting mechanism that raises and lowers the susceptor between a first position and a second position. With the susceptor in the first position, the top surface of the susceptor is above the bottom surface of the preheating ring, and a source gas distribution space with a predetermined height dimension is secured between the top surface of the susceptor and the bottom surface of the ceiling plate of the reaction vessel body. With the susceptor in the second position, the top surface of the susceptor is located below the bottom surface of the preheating ring, and a substrate loading/unloading space, which has a greater height dimension than that of the source gas distribution space, is secured between the top surface of the susceptor and the bottom surface of the preheating ring.