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公开(公告)号：EP3913753A1
公开(公告)日：2021-11-24
申请号：EP21172851.4
申请日：2021-05-07
申请人： Exalos AG
发明人： CASTIGLIA, ANTONINO FRANCESCO , ROSSETTI, MARCO , MALINVERNI, MARCO , DÜLK, MARCUS , VELEZ, CHRISTIAN
摘要： An edge-emitting semiconductor laser diode chip (15) with mutually opposed front and back end facet mirrors (22, 24). First and second ridges (26 1 , 26 2 ) extend between the chip end facets (22, 24) to define first and second waveguides in an active region layer (14). Low and high slope efficiency laser diodes (LD L , LD H ) are thus formed that are independently drivable by respective electrode pairs (21 1 , 23 1 and 21 2 , 23 2 ). The single chip (15) thus incorporates two laser diodes sharing a common heterostructure, one with low slope efficiency optimized for low power operation with good power stability against temperature variations and random threshold current fluctuations in the close-to-threshold power regime, and the other with high slope efficiency optimized for high wall plug efficiency operation at higher output powers when the chip is operating far above threshold.
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公开(公告)号：EP3916935A1
公开(公告)日：2021-12-01
申请号：EP21172853.0
申请日：2021-05-07
申请人： Exalos AG
发明人： CASTIGLIA, ANTONINO FRANCESCO , ROSSETTI, MARCO , MALINVERNI, MARCO , DÜLK, MARCUS , VELEZ, CHRISTIAN
摘要： A laser diode chip (15) comprising a bias-dependent absorber section and a lasing section (23 1 and 23 2 ). The laser diode can be operated at low or high slope efficiency depending on the desired power stability and output power characteristics. The absorber and lasing sections (23 1 and 23 2 ) are arranged in series between end facets (22, 24) and share a common ridge waveguide (26) but have independent optical cavities separated by an intermediate monolithic mirror (25) which has a dual function of forming the output coupler for the back section and the back reflector for the front section. The bias in each section is independently controllable by section-specific electrodes (21 1 and 21 2 ). The two sections (23 1 and 23 2 ) share the same epitaxial structure. The absorber section may be at the front and the lasing section at the back or vice versa.
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公开(公告)号：EP4231469A1
公开(公告)日：2023-08-23
申请号：EP22208401.4
申请日：2022-11-18
申请人： Exalos AG
发明人： ROSSETTI, MARCO , DÜLK, MARCUS , CASTIGLIA, ANTONINO FRANCESCO , MALINVERNI, MARCO , VELEZ, CHRISTIAN
摘要： A monolithic edge-emitting semiconductor diode array chip (100) comprises
a one-dimensional array (70) of diode emitters (50), such as laser diodes, superluminescent diodes or semiconductor optical amplifiers. Semiconductor layers are arranged on a conductive substrate (1) and include active region layers (14) arranged between upper and lower cladding layers (12, 16) and separation layers (4, 5) arranged between the conductive substrate (1) and the lower cladding layer (16). The diode emitters (50) are formed by respective ridges (9) that are separated by trenches (25) which are sufficiently deep to penetrate into the separation layers (4, 5). Each diode (50) has its own upper and lower contacts (22, 24) that allow each diode (50) to be independently drivable with a current source driver circuit connected to push a modulated push current through its associated diode and/or a current sink connected to extract a modulated pull current through its associated diode.
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