公开(公告)号：EP1601813A1

公开(公告)日：2005-12-07

申请号：EP04703337.8

申请日：2004-01-20

申请人： FORSCHUNGSZENTRUM JÜLICH GMBH

发明人： ROSCHEK, Tobias ,  RECH, Bernd

IPC分类号： C23C16/24 ,  H01L31/18 ,  C23C16/505

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/45557 ,  C23C16/505 ,  H01L21/02532 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-containing gas or a gas mixture containing hydrogen is supplied to the plasma chamber in an alternatively continuous manner, and the gas mixture located inside the chamber is, at least in part, simultaneously withdrawn from the chamber. From the start, homogeneous microcrystalline silicon is deposited onto the substrate in the presence of hydrogen.

公开(公告)号：EP1601813B1

公开(公告)日：2008-08-06

申请号：EP04703337.8

申请日：2004-01-20

申请人： Forschungszentrum Jülich GmbH

发明人： ROSCHEK, Tobias ,  RECH, Bernd

IPC分类号： C23C16/24 ,  H01L31/18 ,  C23C16/505

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/45557 ,  C23C16/505 ,  H01L21/02532 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521