利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

2 条记录 (耗时 0.008 秒)

    Integrated semiconductor device including a Bias voltage generator
    2.
    发明公开
    Integrated semiconductor device including a Bias voltage generator 失效
    Integrierte Halbleiterschaltung mit Vorspannungserzeuger。

    公开(公告)号：EP0067688A1

    公开(公告)日：1982-12-22

    申请号：EP82303044.0

    申请日：1982-06-11

    申请人： FUJITSU LIMITED

    发明人： Takemae, Yoshihiro ,  Nakano, Tomio ,  Nakano, Masao ,  Tsuge, Norishisa ,  Ohira, Tsuyoshi

    IPC分类号： G05F3/20

    CPC分类号： G05F3/205

    摘要： An IC semiconductor device includes a bias-voltage generator comprising an oscillator (OSC), a charge-pumping circuit which is driven by the oscillator via a pumping capacitator, and a charge-pumping switch (41). The charge-pumping switch (41) is connected in series with the charge-pumping circuit. The charge-pumping switch is operated by an external electrode (PAD). The charge-pumping switch is turned OFF by the external electrode substrate leak circuit when measurement of substrate leak current is to be carried out, thereby enabling greater accuracy of measurement.

    摘要翻译： IC半导体器件包括偏置电压发生器，其包括振荡器（OSC），经由泵浦电容器由振荡器驱动的电荷泵浦电路和电荷泵浦开关（41）。 电荷泵浦开关（41）与电荷泵浦电路串联连接。 电荷泵开关由外部电极（PAD）操作。 当要进行基板泄漏电流的测量时，电荷泵浦开关由外部电极基板泄漏电路断开，从而能够实现更高的测量精度。