公开(公告)号：EP4287278A1

公开(公告)日：2023-12-06

申请号：EP22176054.9

申请日：2022-05-30

申请人： Faculdade de Ciências, Universidade de Lisboa

发明人： Lobato, Killian Paolo Kiernan ,  Gaspar, Guilherme Manuel Morais ,  Serra, Filipe Carreira

IPC分类号： H01L31/18 ,  H01L21/22 ,  H01L21/223 ,  H01L21/268 ,  H01L31/078 ,  H01L27/30

摘要： The invention relates to a method for producing a doped material (2), in particular a doped semiconductor, comprising the steps: providing a material (4), wherein the material comprises a surface (6) and a first dopant (8) in at least an area (10) below the surface (6); processing the material (4) by directing a first pulsed processing beam (12) onto the surface (6) of the material (4), wherein the processing comprises locally and temporarily melting the material such that the first dopant (8) moves away from the surface (6) and subsequent solidification of the previously locally molten material; providing a second dopant (14) on the surface of the material; and incorporating the second dopant (14) into the material (4) by directing a second pulsed processing beam (16) onto the surface (6), wherein incorporating the second dopant (14) comprises locally and temporarily melting the material (4) such that the second dopant (14) moves into the material (4) and subsequent solidification of the previously locally molten material.
The invention further relates to a system (40) for producing a doped material (2).