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    HALL EFFECT MAGNETIC SENSOR OF THE IMPROVED TYPE AND MATRIX COMPRISING A PLURALITY OF SAID HALL EFFECT MAGNETIC SENSORS.
    1.
    发明公开
    HALL EFFECT MAGNETIC SENSOR OF THE IMPROVED TYPE AND MATRIX COMPRISING A PLURALITY OF SAID HALL EFFECT MAGNETIC SENSORS. 审中-公开
    霍尔效应磁性传感器的改进类型和矩阵包括多个所谓的霍尔效应磁传感器。

    公开(公告)号：EP3194991A1

    公开(公告)日：2017-07-26

    申请号：EP15788186.3

    申请日：2015-09-04

    申请人： Fondazione Bruno Kessler

    发明人： PERENZONI, Daniele ,  PANCHERI, Lucio

    IPC分类号： G01R33/00 ,  G01R33/07

    CPC分类号： G01R33/07 ,  G01R33/0088 ,  G01R33/077

    摘要： The invention is a Hall effect magnetic sensor (1 ) suited to measure the intensity of a magnetic field (M), comprising a semiconductor substrate (2) subjected to doping on which the following elements are defined: two diodes arranged side by side; means (6) suited to inject minority charge carriers (100) and provided on the semiconductor substrate (2) along the axis of symmetry (X) defined between the two diodes (3), wherein the injector means (6) are configured to inject the minority charge carriers (100) in the semiconductor substrate (2) in such a way as to generate a diffusion current suited to flow under the two diodes (3); processing means (7) operatively connected to each output channel (32) of the two diodes (3) and configured to count the number of events induced by the minority charge carriers (100) on both of the diodes (3) during a pre-established time observation window (T) and to calculate the difference between the counts at the end of the observation time window (T). The Hall effect magnetic sensor (1 ) furthermore comprises a quenching circuit (5) connected in series to each one of the output channels (32) of the diodes (3) and the processing means (7) are operatively connected in an intermediate position between the output channels (32) and the quenching circuits (5).

    摘要翻译： 本发明是一种霍尔效应磁传感器（1），其适于测量磁场（M）的强度，包括经掺杂的半导体衬底（2），其上定义了以下元件：并排布置的两个二极管; （6），其适于注入少数电荷载流子（100）并且沿着在所述两个二极管（3）之间限定的所述对称轴线（X）设置在所述半导体衬底（2）上，其中所述注入器装置（6） 所述半导体衬底（2）中的少数电荷载流子（100）以产生适于在所述两个二极管（3）下面流动的扩散电流; 处理装置（7），可操作地连接到两个二极管（3）的每个输出通道（32），并被配置为在预定时间期间对两个二极管（3）上的少数电荷载流子（100） 建立时间观察窗口（T）并计算观察时间窗口（T）结束时的计数之间的差值。 霍尔效应磁传感器（1）还包括串联连接到二极管（3）的每个输出通道（32）的熄灭电路（5），并且处理装置（7）可操作地连接在二极管 输出通道（32）和淬火电路（5）。