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公开(公告)号:EP3217423A1
公开(公告)日:2017-09-13
申请号:EP16158906.4
申请日:2016-03-07
IPC分类号: H01L21/316
CPC分类号: H01L21/02203 , C23C14/0005 , C23C14/10 , H01L21/02164 , H01L21/02266 , H01L21/2007 , H01L21/28167 , H01L29/51
摘要: The present invention inter alia relates to a supported silica bilayer (SiO 2 bilayer) film. In the supported silica bilayer film, the silica bilayer film consists of two atomic layers of corner-sharing SiO 4 tetrahedra, forms in itself a chemically saturated structure and contains pores. The silica bilayer film has a first (1) and a second side (2) and is supported on the first side (1) by a removable polymer film. The invention further relates to a process for producing the supported silica bilayer film, a process for transferring a silica bilayer film, a free-standing silica bilayer film, a stack comprising a plurality of silica bilayer films, a filed-effect transistor having a gate oxide comprising the silica bilayer film or a stack thereof and the use of a silica bilayer film.
摘要翻译: 本发明特别涉及负载型二氧化硅双层(SiO 2双层)膜。 在负载的二氧化硅双层膜中,二氧化硅双层膜由角共享SiO4四面体的两个原子层组成,其本身形成化学饱和结构并包含孔。 二氧化硅双层膜具有第一侧面(1)和第二侧面(2)并且通过可移除的聚合物膜支撑在第一侧面(1)上。 本发明进一步涉及制备负载型二氧化硅双层膜的方法,用于转移二氧化硅双层膜的方法,自立式二氧化硅双层膜,包含多个二氧化硅双层膜的堆叠,具有栅极的场效应晶体管 包含二氧化硅双层膜或其叠层的氧化物以及二氧化硅双层膜的用途。