公开(公告)号：EP1584950A3

公开(公告)日：2010-12-01

申请号：EP05006286.8

申请日：2005-03-22

申请人： FUJIFILM Corporation

发明人： Kohda, Katsuhiro ,  Miyake, Kiyoteru ,  Kaito, Ryouzou

IPC分类号： G01T1/29

CPC分类号： G01T1/246

摘要： A photoconductive layer included in a radiation imaging panel for recording radiation image information as an electrostatic latent image is a polycrystal made of Bi 12 MO 20 , where M is at least one of Ge, Si and Ti, the filling factor of Bi 12 MO 20 composing the photoconductive layer is 70% or more, and the thickness of the photoconductive layer is between 50 µm and 600 µm inclusive.

公开(公告)号：EP1780800A3

公开(公告)日：2007-07-11

申请号：EP06022742.8

申请日：2006-10-31

申请人： Fujifilm Corporation

发明人： Miyake, Kiyoteru

IPC分类号： H01L31/0272 ,  H01L31/0328 ,  H01L31/08 ,  H01L31/18

CPC分类号： H01L31/032 ,  G03G5/08207 ,  H01L27/14676 ,  H01L31/0272 ,  H01L31/02725 ,  H01L31/085

摘要： A photoconductive layer (2) for a radiation image taking panel (10) is formed by selenium alloy containing 0.1 to 1000 molar ppm of monovalent metal and 0.1 to 1000 molar ppm of a chalcogenide element other than Se or selenium alloy containing 0.1 to 1000 molar ppm of monovalent metal and 0.1 to 100 molar ppm of a V group element.

公开(公告)号：EP1780800A2

公开(公告)日：2007-05-02

申请号：EP06022742.8

申请日：2006-10-31

申请人： Fujifilm Corporation

发明人： Miyake, Kiyoteru

IPC分类号： H01L31/0272 ,  H01L31/0328 ,  H01L31/08 ,  H01L31/18

CPC分类号： H01L31/032 ,  G03G5/08207 ,  H01L27/14676 ,  H01L31/0272 ,  H01L31/02725 ,  H01L31/085

摘要： A photoconductive layer (2) for a radiation image taking panel (10) is formed by selenium alloy containing 0.1 to 1000 molar ppm of monovalent metal and 0.1 to 1000 molar ppm of a chalcogenide element other than Se or selenium alloy containing 0.1 to 1000 molar ppm of monovalent metal and 0.1 to 100 molar ppm of a V group element.

摘要翻译： 用于辐射图像拍摄面板（10）的光电导层（2）由硒合金形成，所述硒合金包含0.1-1000摩尔ppm的一价金属和0.1-1000摩尔ppm的除硒之外的硫族化物元素或者含有0.1-1000摩尔 ppm的一价金属和0.1至100摩尔ppm的V族元素。