公开(公告)号：EP1178129A1

公开(公告)日：2002-02-06

申请号：EP00978005.7

申请日：2000-11-29

申请人： Fujikura Ltd. ,  International Superconductivity Technology Center, The Juridical Foundation

发明人： IIJIMA, Yasuhiro, Fujikura Ltd. ,  KIMURA, Mariko, Fujikura Ltd. ,  SAITO, Takashi, Fujikura Ltd., 5-1, Kiba 1-chome

IPC分类号： C23C14/08 ,  C23C14/32 ,  H01B12/06 ,  H01B13/00 ,  C30B29/22 ,  C01G25/00

CPC分类号： H01L39/2461 ,  C01G25/00 ,  C01G27/00 ,  C23C14/08 ,  C23C14/3414 ,  C23C18/1216 ,  C23C18/14 ,  C30B23/002 ,  C30B29/22 ,  Y10S428/93 ,  Y10S505/731

摘要： The polycrystalline thin film (B) is made of a composite oxide of a cubic crystal system which has a pyrochlore type crystalline structure of a composition represented as either AZrO or AHfO (A in the formula represents a rare earth element selected from among Y, Yb, Tm, Er, Ho, Dy, Eu, Gd, Sm, Nd, Pr, Ce and La) formed on the film forming surface of the polycrystalline substrate (A), wherein the grain boundary misalignment angle (K) between the same crystal axes of different crystal grains in the polycrystalline thin film (B) along a plane parallel to the film forming surface of the polycrystalline substrate (A) are controlled within 30°.

摘要翻译： 该多晶薄膜（B）是由选自Y，镱中选择的立方晶系其中有代表作为要么Azro或AHfO（A式darstellt稀土元素中的组合物的烧绿石型结晶结构的复合氧化物的 ，TM，铒，何，镝，铕，钆，钐，钕，镨，Ce和La）的所形成的多晶基体（A）的膜形成表面上，worin相同的晶体之间的晶粒边界的未对准角度（K） 沿着平行于多晶基板（A）的膜形成表面的平面中的多晶薄膜（B）不同的晶粒的轴30 DEG内控制。

公开(公告)号：EP1391543A1

公开(公告)日：2004-02-25

申请号：EP02728058.5

申请日：2002-05-15

申请人： International Superconductivity technology Center, The Juridical Foundation ,  Fujikura Ltd.

发明人： SUGA, Toshihiro,Int. Superconductivity, Tech. Ctr. ,  YAMADA, Yasuji, Int. Superconductivity, Tech. Ctr. ,  MAEDA, Toshihiko,Int. Superconductivity,Tech. Ctr. ,  KIM,Seok.Beom, Int. Superconductivity, Tech. Ctr. ,  KUROSAKI,Haruhiko,Int.Superconductivity,Tech. Ctr. ,  YAMADA, Yutaka,Int. Superconductivity,Tech. Ctr. ,  HIRABAYASHI, Izumi,, Int. Superconductivity, T. C. ,  IIJIMA, Yasuhiro, Fujikura Ltd. ,  WATANABE, Tomonori, The Furukawa Electric Co., Ltd ,  YOSHINO, Hisahi,Toshiba Corp., Corporate,Res & Dev ,  MURANAKA, Koji,Sumitomo Electric Industries, Ltd.

IPC分类号： C30B29/22

CPC分类号： C30B19/02 ,  C30B29/22 ,  C30B29/225

摘要： There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO-CuO-BaF 2 system or a BaO-CuO-Ag-BaF 2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850°C.

摘要翻译： 提供了一种用于制备氧化物晶体膜的和的复合材料的基板，通过使用液相法形成从上基板的溶液相的Y123型氧化物晶体电影的方法，worin问题：如氧化物晶体电影的开裂， 的氧化物结晶膜从基板，基板和溶液之间的反应层的发展的分离可以被最小化。 用于形成溶液相溶剂使用任一个的BaO-CuO的氟化钡系统或的BaO-CuO系银氟化钡系统，并且当与晶种膜键合于表面的基片在接触时与该溶液中以形成（ 生长）在基片上的氧化物结晶的电影，将溶液的温度被控制到不超过850℃的温度