公开(公告)号：EP2611952A2

公开(公告)日：2013-07-10

申请号：EP11822675.2

申请日：2011-09-01

申请人： GT Advanced CZ LLC

发明人： DELUCA, John, P. ,  DELK, Frank, S. ,  JOHNSON, Bayard, K. ,  LUTER, William, L. ,  MIDDENDORF, Neil, D. ,  WILLIAMS, Dick, S. ,  OSTROM, Nels, Patrick ,  HIGHFILL, James, N.

IPC分类号： C30B15/04 ,  C30B29/06 ,  H01L31/042

CPC分类号： C30B15/04 ,  C30B15/002 ,  C30B29/06

摘要： A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.