公开(公告)号：EP1257684B1

公开(公告)日：2007-01-03

申请号：EP00955754.7

申请日：2000-08-17

申请人： GT Solar Incorporated

发明人： CHANDRA, Mohan ,  JAFRI, Ijaz ,  GUPTA, Kedar ,  PRASAD, Vishwanath ,  TALBOTT, Jonathan

IPC分类号： C23C16/24 ,  C01B33/027 ,  C01B33/035

CPC分类号： C01B33/027 ,  C23C16/24

摘要： The production of bulk polysilicon by a chemical vapor deposition process on a tube section. A quartz envelope (31) and a base plate (34) form a CVD reactor enclosure, with external radiant heaters (33) providing heat through the wall of the reactor, and with gas inlet (35) and outlet (36) ports located in base plate (34). A tube section (32), preferably an EFG silicon tube section, vertically emplaced on base plate (34) and capped (43) to close the top is used as the reaction chamber. Deposition occurs on the inside surface of the chamber tube (32), the inner diameter of the deposit layer becoming increasingly smaller as the yield accumulates. In a two tube reactor, vertical middle tube (46) is supported inside the chamber tube for full flow of process gas over and under the middle tube (46) so that deposition occurs on the three exposed tube surfaces.