专利检索 ap:("GlobalWafers Co., Ltd.") AND inv:"STANDLEY, Robert Wendell" 第 1 页

1.

发明公开
IMPROVED RESISTIVITY STABILIZATION MEASUREMENT OF FAT NECK SLABS FOR HIGH RESISTIVITY AND ULTRA-HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT GROWTH 审中-公开

公开(公告)号：EP3902942A1

公开(公告)日：2021-11-03

申请号：EP19836380.6

申请日：2019-12-13

申请人： GlobalWafers Co., Ltd.

发明人： HUDSON, Carissima Marie , LEE, HyungMin , RYU, JaeWoo , PHILLIPS, Richard J. , STANDLEY, Robert Wendell

IPC分类号： C30B15/04 , C30B29/06 , C30B15/20 , C30B33/02

2.

发明公开
IMPROVED RESISTIVITY STABILIZATION MEASUREMENT OF FAT NECK SLABS FOR HIGH RESISTIVITY AND ULTRA-HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT GROWTH 审中-公开

公开(公告)号：EP4209625A1

公开(公告)日：2023-07-12

申请号：EP23158726.2

申请日：2019-12-13

申请人： GlobalWafers Co., Ltd.

发明人： HUDSON, Carissima Marie , LEE, HyungMin , RYU, JaeWoo , PHILLIPS, Richard J. , STANDLEY, Robert Wendell

IPC分类号： C30B29/06 , C30B15/04 , C30B15/20 , C30B33/02

摘要： Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in the thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.