Method of evaluating corrosion resistance of metal material, method of designing alloy of high corrosion resistance, method of diagnosing corroded state of metal material, and method of operating plant
    2.
    发明公开
    Method of evaluating corrosion resistance of metal material, method of designing alloy of high corrosion resistance, method of diagnosing corroded state of metal material, and method of operating plant 失效
    一种用于设计一个耐腐蚀合金的金属物体,以及用于诊断的金属物体的腐蚀状态的方法的耐腐蚀性的评价方法,和操作设备的方法

    公开(公告)号:EP0693680A2

    公开(公告)日:1996-01-24

    申请号:EP95304724.8

    申请日:1995-07-06

    申请人: HITACHI, LTD.

    IPC分类号: G01N17/00

    CPC分类号: G01N1/04 G01N17/00

    摘要: The composition of an alloy is inhomogeneous, so that the Fermi level of electrons in the surface of the alloy differs depending upon positions. It is accordingly considered that a part susceptible to corrosion and a part less susceptible thereto will coexist in the alloy. The corrosion rate of the alloy is indicated as the exponential function of a potential difference (ΔΦH) within an electric double layer. The potential difference remains unchanged as long as the Fermi level lies within the forbidden band of the electrons. However, in a range in which the Fermi level falls within the valence band of the electrons, the lowering thereof leads to the increase of the potential difference. Accordingly, a corrosion-resisting alloy is designed in accordance with the following guidelines: a) The electron energy level (Ev) of the valence band is low, b) an oxide film to be formed on the alloy is an n-type semiconductor, c) a band gap (Ec - Ev) is wide where Ec denotes the conduction band of the electrons, and d) a flatband potential (Ef1) is low. Further, the operation of a plant and the evaluation of a corrosional damage can be based on such a theory.

    摘要翻译: 的合金的组成是不均匀的,所以在合金的不同而不同的位置的表面做了电子的费米能级。 据相应的考虑没有易受腐蚀和部分不易受到与其将在合金中共存的部分。 合金的腐蚀速率被表示为内的双电层的电势差(DELTA PHI H)的指数函数。 该电位差保持不变,只要费米能级位于电子的禁带之内。 然而,在一个范围中的费米能级,如果电子的价带内时,其降低导致的电势差的增加。 因此,抗腐蚀的合金设计中雅舞蹈下列准则:a)将价带的电子能级(EV)低,B)氧化物的膜对合金来形成为n型半导体, c)一种带隙(经济 - )是宽这里,Ec表示的电子的导带中,以及d)一扁平的带状电位(EF1)低。 此外,运算植物和溶蚀损伤的评价可以基于寻求的理论。